STD30N6LF6AG Allicdata Electronics

STD30N6LF6AG Discrete Semiconductor Products

Allicdata Part #:

497-16302-2-ND

Manufacturer Part#:

STD30N6LF6AG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 24A
More Detail: N-Channel 60V 24A (Tc) 40W (Tc) Surface Mount DPAK
DataSheet: STD30N6LF6AG datasheetSTD30N6LF6AG Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: Automotive, AEC-Q101, STripFET™ F6
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A MOSFET, also known as a Metal Oxide Semiconductor Field Effect Transistor, is an active semiconductor device. It is used for switching and for amplifying electrical signals. MOSFETs are more efficient than conventional transistors, and therefore can be used in a wider range of applications.

The STD30N6LF6AG is a high-performance single-channel enhancement-mode power MOSFET. It has an drain-source voltage up to 60V, a drain current up to 20A, and an on-resistance of 4.5mOhm. The MOSFET has a shut-off voltage of 1.5V and a low on-resistance variation over gate voltage. The gate-source voltage of this MOSFET can be as high as 20V.

The STD30N6LF6AG is ideal for applications that require large current and voltage switching such as motor control and LED lighting. It can also be used for power management in industrial, automotive and consumer electronics applications. The wide range of features of the MOSFET makes it suitable for a variety of applications such as DC/DC converters, motor controllers, instrumentation, power MOSFET drivers, and power amplification.

The working principle of the STD30N6LF6AG is similar to that of other MOSFETs. The gate electrode is insulated from the source and drain electrodes by a thin layer of dielectric material. When a voltage is applied to the gate, it produces an electrostatic field that attracts and repels electrons, allowing current to flow through the channel. When the gate voltage is low, the MOSFET is off, and no current flows; when the gate voltage is high, the MOSFET is on, and current flows.

The STD30N6LF6AG is a versatile device suitable for a wide range of applications. Its high voltage, current and on-resistance characteristics make it ideal for switching and power management applications. Its easy to use and reliable nature makes it suitable for use in a variety of different systems and applications.

The specific data is subject to PDF, and the above content is for reference

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