STD30N6LF6AG Discrete Semiconductor Products |
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Allicdata Part #: | 497-16302-2-ND |
Manufacturer Part#: |
STD30N6LF6AG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 24A |
More Detail: | N-Channel 60V 24A (Tc) 40W (Tc) Surface Mount DPAK |
DataSheet: | STD30N6LF6AG Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1320pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ F6 |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A MOSFET, also known as a Metal Oxide Semiconductor Field Effect Transistor, is an active semiconductor device. It is used for switching and for amplifying electrical signals. MOSFETs are more efficient than conventional transistors, and therefore can be used in a wider range of applications.
The STD30N6LF6AG is a high-performance single-channel enhancement-mode power MOSFET. It has an drain-source voltage up to 60V, a drain current up to 20A, and an on-resistance of 4.5mOhm. The MOSFET has a shut-off voltage of 1.5V and a low on-resistance variation over gate voltage. The gate-source voltage of this MOSFET can be as high as 20V.
The STD30N6LF6AG is ideal for applications that require large current and voltage switching such as motor control and LED lighting. It can also be used for power management in industrial, automotive and consumer electronics applications. The wide range of features of the MOSFET makes it suitable for a variety of applications such as DC/DC converters, motor controllers, instrumentation, power MOSFET drivers, and power amplification.
The working principle of the STD30N6LF6AG is similar to that of other MOSFETs. The gate electrode is insulated from the source and drain electrodes by a thin layer of dielectric material. When a voltage is applied to the gate, it produces an electrostatic field that attracts and repels electrons, allowing current to flow through the channel. When the gate voltage is low, the MOSFET is off, and no current flows; when the gate voltage is high, the MOSFET is on, and current flows.
The STD30N6LF6AG is a versatile device suitable for a wide range of applications. Its high voltage, current and on-resistance characteristics make it ideal for switching and power management applications. Its easy to use and reliable nature makes it suitable for use in a variety of different systems and applications.
The specific data is subject to PDF, and the above content is for reference
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