Allicdata Part #: | STD7NM50N-1-ND |
Manufacturer Part#: |
STD7NM50N-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 5A IPAK |
More Detail: | N-Channel 500V 5A (Tc) 45W (Tc) Through Hole I-PAK |
DataSheet: | STD7NM50N-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | MDmesh™ II |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 780 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The STD7NM50N-1, a N-channel MOSFET, is an important device used in different applications. As such, it is important to understand its application field and working principle.
The STD7NM50N-1 is a depletion-mode MOSFET, which operates in a voltage range of between -20V and -50V. It has a low on-state resistance and a wide variety of gate thresholds, making it ideal for a number of different applications.
In particular, the STD7NM50N-1 can be used as a switch in low-voltage, low-power circuits. It can control the flow of current through the circuit, allowing users to switch the device on and off. The device also has a high current handling capacity, which makes it suitable for use in high-power applications.
The STD7NM50N-1 also features a low input capacitance, which helps it reach high speeds when used in high-speed circuits. This makes it an ideal choice for switching applications such as inverters and pulse-width modulators.
The operating principle of the STD7NM50N-1 is based on the MOSFET’s gate-voltage characteristics. When a positive voltage is applied to the gate of the MOSFET, the current flow between the source and the drain is increased. Conversely, if a negative voltage is applied to the gate, the current flow between the source and the drain is decreased.
The STD7NM50N-1 can also be used as an amplifier in a variety of different circuits. Its high current-handling capacity and low on-resistance allow it to act as an amplifier, which can be used to amplify signals in applications such as audio amplifiers.
The STD7NM50N-1 can also be used as an oscillator, generating a repeating periodic signal when a square-wave input is applied. This makes it ideal for use in oscillator circuits, such as timers and frequency generators.
Additionally, the STD7NM50N-1 can also be used to modulate signals, such as in class-C amplifiers and digital modulation schemes. By varying the gate voltage, the device can be used to change the amplitude, frequency, or phase of the signal being modulated.
The STD7NM50N-1 is an important device which has a wide range of applications. Its low on-state resistance and high current-handling capacity make it suitable for use in low- and high-power applications. The device can be used to switch and control the current in applications such as inverters, amplifiers, and modulators. Its wide range of gate-voltage characteristics makes it an ideal choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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