STD70N02L Allicdata Electronics
Allicdata Part #:

497-5891-2-ND

Manufacturer Part#:

STD70N02L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 25V 60A DPAK
More Detail: N-Channel 25V 60A (Tc) 60W (Tc) Surface Mount DPAK
DataSheet: STD70N02L datasheetSTD70N02L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: STripFET™ III
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
FET Feature: --
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The STD70N02L is a single N-channel enhancement Mode field effect transistor (FET). It is produced by STMicroelectronics and is found in the TO-220 and SOT-223 packages. This transistor can be used in a wide variety of applications including amplifier switching, power management, and signal processing.

The working principle behind this particular transistor is based on the electrical field generated by a voltage applied to its gate terminal. When a positive voltage is applied to its gate, it creates an electrical field which attracts mobile electrons from the semiconductor material, thus allowing the current to flow in the channel. Conversely, when a negative voltage is applied to the gate, the current will be blocked because the electrical field causes the electrons to be repelled away from the channel.

The STD70N02L is a versatile device which has several applications including DC/DC converters, motor control, heating elements, battery chargers and other power management applications. In addition, it can also be used in analog circuits to control the output of an amplifier switching, or as a signal-processing device. Additionally, it can be used to provide a five-volt supply to a peripheral device.

In terms of electrical performance, the STD70N02L has a maximum Pulsed Drain Current (ID) of 70A, a Maximum Continuous Drain Current (ID) of 50A, a Maximum Gate-Source Voltage (VGS) of -20V, and a Maximum Drain-Source Voltage (VDS) of -45V. Furthermore, it has a Drain-Source On Resistance (RDS(on)) of 0.067 Ohm and a Drain-Source Capacitance (Ciss) of 130pF at VGS = 10V, which ensures excellent signal clarity when used for switching applications.

In terms of power efficiency, the STD70N02L is designed to operate with an ultra-low RDS(on) at low gate-source voltage, delivering higher current capability at lower voltage levels. This helps to reduce power losses, resulting in improved efficiency and lower overall operating costs.

Overall, the STD70N02L is an ideal choice for a wide range of applications, particularly wherever a high current capability is required. Its fast switching performance and low power dissipation make it a popular choice for many different applications. Furthermore, its cost-effectiveness, robustness and easy-to-use design make it an attractive option for use in a variety of machines, systems and applications.

The specific data is subject to PDF, and the above content is for reference

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