Allicdata Part #: | 497-12240-2-ND |
Manufacturer Part#: |
STD70N6F3 |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 70A DPAK |
More Detail: | N-Channel 60V 70A (Tc) 110W (Tc) Surface Mount DPA... |
DataSheet: | STD70N6F3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.83136 |
Series: | STripFET™ III |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD70N6F3 is a N-channel Enhancement Mode (normally-off) MOSFET, also commonly known as an insulated gate field effect transistor. It is one of the most popular types of discrete power transistors on the market and is known for its high energy efficiency.
The STD70N6F3 is a single-channel enhancement type MOSFET which means that it has only one source, drain, and gate terminal connecting electrical current within the system. When applying a voltage across the source and drain, the gate terminal toggles between being on or off. This allow users to hold and release a voltage in order to conserve energy, making it an ideal power management transistor.
The STD70N6F3 is typically used in numerous low-milliwatt, low-voltage applications. Its current-handling capabilities range between 4 to 8amps, and its maximum voltage ratings range between 25 to 100 volts, depending on the type of application. It is also able to automatically switch between low and high voltage settings. This can be useful when trying to keep the current at a steady rate while varying the voltage, or when trying to decrease the amount of system noise from electrical currents of higher power.
The STD70N6F3 also has several equations associated with it in order to accurately configure the transistor. This includes maximum power dissipation equations and gate threshold voltage equations. The former equation helps calculate the amount of energy needed for the transistor to perform its desired operations, while the second equation works to keep the gate voltage in line with the source voltage by measuring the MOSFET’s threshold voltage.
In addition to its power and voltage applications, the STD70N6F3 is also a suitable choice for electrical protection and computerized power facility applications. For instance, it can be used to prevent systems from being damaged during electrical surges, or as a way of controlling the current in order to conserve energy.
Finally, the STD70N6F3 is a reliable, efficient, and cost-effective power transistor that is well suited to most power management needs. It can be used in a wide variety of applications and its current and voltage capabilities are some of the highest available on the market. With its high energy-saving capabilities, the transistor can help save energy and money by keeping electrical currents regulated.
The specific data is subject to PDF, and the above content is for reference
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