Allicdata Part #: | 497-15050-2-ND |
Manufacturer Part#: |
STD7N65M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 5A DPAK |
More Detail: | N-Channel 650V 5A (Tc) 60W (Tc) Surface Mount DPAK |
DataSheet: | STD7N65M2 Datasheet/PDF |
Quantity: | 1000 |
Series: | MDmesh™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.15 Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD7N65M2 is part of a family of metal–oxide–semiconductor field–effect transistors (MOSFETs) designed for use in a wide range of applications. They can be used as switches or amplifiers, and they have the same basic principle of operation. However, they also have some unique features that set them apart from other MOSFET devices.
The most distinctive feature of the STD7N65M2 is its ability to handle extremely high current levels. This makes them ideal for use in applications that require high power handling and control, such as motor control and power conversion. They are also very tolerant of over-voltages, making them suitable for use in applications that require robustness and reliability.
The basis of the operation of the STD7N65M2 is the same as all other MOSFETs. When a gate-source voltage (VGS) is applied, it causes a variation in the channel width, and thus the amount of current that can flow through the transistor. The amount of current that can flow through the device is thus determined by the gate-source voltage that is applied.
The gate-source voltage can be controlled in two ways. The first is with a gate resistor, which is used to set the voltage of the gate. The second is by using a gate-charge control circuit, which can regulate the amount of current that can flow through the device. This makes the device easily adjustable, allowing users to fine-tune its performance.
The main difference between the STD7N65M2 and other MOSFET devices is that it uses a depletion-mode operation. This means that the device will turn on at a lower gate voltage. This is beneficial in many applications where high current handling is required and a low switching speed is not necessary. This makes it a much faster switch than a typical enhancement-mode MOSFET.
The STD7N65M2 also has a number of safety features that protect it from damage caused by excessive voltages or temperatures. It has a built-in reverse-parallel diode, which prevents back-biasing of the gate during operation, and it has an over-temperature protection circuit that prevents the device from overheating.
The STD7N65M2 is an excellent choice for many applications that require high current handling and excellent reliability. It is suitable for use in motor control and power conversion, where it can be used to control large motors and convert DC power to AC power. It is also an ideal choice for applications that require robustness and reliability, such as those found in industrial environments.
The specific data is subject to PDF, and the above content is for reference
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