Allicdata Part #: | STD7NK30Z-ND |
Manufacturer Part#: |
STD7NK30Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 300V 5A DPAK |
More Detail: | N-Channel 300V 5A (Tc) 50W (Tc) Surface Mount DPAK |
DataSheet: | STD7NK30Z Datasheet/PDF |
Quantity: | 1000 |
Series: | SuperMESH™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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A STD7NK30Z is a type of insulated-gate field-effect transistor (IGFET), sometimes known as a metal-oxide semiconductor field-effect transistor (MOSFET). IGFETs are power devices that have been widely used in many various types of applications such as motor control, power supplies, battery chargers, and amplifiers. They are integrated circuits that are crucial in the control of electric power. The STD7NK30Z is a single-channel, high voltage, N-Channel MOSFET, using a 3rd generation vertical trench technology. With its specific characteristics, the STD7NK30Z is designed to work in a wide range of commercial and industrial applications.
There are a variety of benefits to using STD7NK30Z MOSFETs. First, they have excellent performance in comparison to other MOSFETs. They are capable of handling high voltage pulses with very low gate charge and RDS (on). Secondly, they have a low total gate charge, allowing for greater efficiency and lower power consumption. Last but not least, they are environmentally friendly, as they do not produce hazardous waste.
The STD7NK30Z\'s application field includes motor control, automotive applications, power supplies, UPS systems, lighting ballasts, audio power amplifiers, and solar inverters. This MOSFET is commonly used in applications that require high power, efficiency, and low loss. In particular, the STD7NK30Z is able to withstand high voltage pulses, thanks to its vertical trench structure. This design allows for higher current densities at higher temperatures, which allows the component to operate reliably. Additionally, the surface area of the component is much smaller than other components designed for high power applications, making it more suitable for applications where space is a limitation.
The working principles of the STD7NK30Z are relatively straightforward. When a voltage is applied to the gate of the MOSFET, it creates an electrical field that attracts electrons to the gate. This causes current to flow from the source to the drain. When the source voltage is less than the gate voltage, the current is blocked and no current can flow. This is known as off state. When the source voltage is greater than the gate voltage, the current flows freely, allowing the component to function as a switch.
The STD7NK30Z is an excellent component for a variety of applications. With its high efficiency and excellent performance, it is one of the most popular MOSFETs used in the industry. Its wide range of applications and its easy-to-use working principles make it a great choice for any power component design.
The specific data is subject to PDF, and the above content is for reference
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