STD75N3LLH6 Allicdata Electronics
Allicdata Part #:

497-10119-2-ND

Manufacturer Part#:

STD75N3LLH6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 75A DPAK
More Detail: N-Channel 30V 75A (Tc) 60W (Tc) Surface Mount DPAK
DataSheet: STD75N3LLH6 datasheetSTD75N3LLH6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: DeepGATE™, STripFET™ VI
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
FET Feature: --
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The STD75N3LLH6, often referred to as the N3LLH6, is a single-Strain Avalanche-Mode MOSFET from STMicroelectronics. The N3LLH6 is a fast switching, high-current, and low on-state resistance MOSFET that is widely used in power electronics applications for voltage and current control, switching, and amplification. This article will discuss the application field and working principle of the STD75N3LLH6.

Application Fields

The N3LLH6 has a wide range of applications in power electronics due to its high current handling capability, wide voltage range, and low on-state resistance. It is commonly used in switch-mode power supplies (SMPS) and motor drives, as well as in DC-DC converters, DC-to-AC inverters, and power adapters. It can also be used in applications where efficient power conversion and high-density switching are required, such as in smartphones, laptops, and other electronic devices.

The N3LLH6 is well-suited for applications that require high-frequency switching, such as DC-DC converters and SMPS. Its fast switching speeds and low on-state resistance result in higher efficiency, improved power density, and greater immunity to switching losses. This makes it an ideal choice for SMPS, DC-DC converters, and motor drives, as it can significantly reduce switch losses and improve overall power efficiency. This is especially important for applications that require high performance or high current levels.

Additional applications for the N3LLH6 include power Factor Correction (PFC) circuits and active grid protection systems, as well as automotive applications such as DC-to-DC converters, Battery Management Systems (BMS), and Automotive Body Electronics Control Modules (BECMs). It is also used in industrial process control and automation, where its high switching speed and low on-state resistance make it ideal for current and voltage control.

Working Principle

The N3LLH6 is a type of MOSFET which operates using an avalanche mechanism. This means that the voltage at the gate (VG) is applied directly to the channel and induces a large enough current to produce electrons in the channel to create an avalanche breakdown. This triggers the switching process, allowing current to flow through the drain and source. The voltage at the gate must be the same as the voltage at the drain in order for the MOSFET to switch on. The N3LLH6 also features a common-drain configuration, meaning that the drain-to-source voltage (VDS) is the same as the gate-to-source voltage (VGS).

The avalanche breakdown can occur at any given threshold voltage (VTH). The threshold voltage of the N3LLH6 is -3.3V, meaning that the voltage at the gate must be at least -3.3V for the MOSFET to switch on. This threshold voltage is very low, which helps to reduce power losses when switching from low to high voltages. Additionally, the N3LLH6 has a high breakdown voltage of up to 600V, which ensures that the device can handle high voltages without damage or risk of failure.

When the voltage at the gate is increased, the drain current (ID) is increased until it reaches a maximum. This maximum is known as the drain current limit and is determined by the device\'s channel width, channel length, and chip geometry. Beyond the drain current limit, the MOSFET can be damaged and may experience shortening of its life expectancy, so it is important to be aware of the device\'s current limit.

The voltage at the drain is critical when switching the N3LLH6. If the voltage is too low, then the device will not be able to switch on. Conversely, if the voltage is too high then the device may be damaged due to excessive current. The safe operating range for the N3LLH6 is between 2V and 600V.

Conclusion

The STD75N3LLH6 is a fast switching, high-current, and low on-state resistance MOSFET with a wide range of applications. It is commonly used in switch-mode power supplies and motor drives, as well as in DC-DC converters, DC-to-AC inverters, and power adapters. Additionally, the N3LLH6 has a wide range of automotive applications, such as DC-to-DC converters, Battery Management Systems (BMS), and Automotive Body Electronics Control Modules (BECMs). It operates using an avalanche mechanism, and has a low threshold voltage and high breakdown voltage, making it well-suited for high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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