STD7NM50N

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The STD7NM50N is a N-channel enhancement mode Field Effect Transistor (FET). It belongs to the STMicroelectronics STripFET II family. The STD7NM50N is a low-cost, low-on-resistance, small-footprint power MOSFET that can be used in a range of applications such as in switching or linear mode power applications from 12V to 500V.

The main feature of this transistor is its low gate-drain charge. This is because of its low gate-source voltage (VGS) which can be as low as 2V. Moreover, the transistor has a good power capability of 2W due to its low on-resistance (R_DS(on)).

The STD7NM50N is capable of operating at high switching frequency and low gate-source capacitance, which makes it suitable for high-speed applications. The device features maximum and minimum values of 10nC and 0.7pC respectively which is better than the other FD-MOS devices available with same ratings.

The transistor is also designed to provide a rugged and reliable solution to the customer. It has an exceptionally low gate-drain charge leakage. The low gate switcheability ensures that the system is turn-on and turn-off losses are minimized. The STD7NM50N also exhibits good thermal stability and the package has been designed to facilitate the efficient thermal management of the device.

The working principle of the STD7NM50N remains the same as for any other N-channel FET. A voltage is applied to the gate, which in turn induces a change in the shape of the channel established between the source and the drain. This in turn modifies the current flow between the source and the drain of the device. When the voltage applied to the gate is high enough, the transistor switches ON, allowing current flow between the source and the drain. On the other hand, when the voltage applied to the gate is low, the device switches OFF, and no current can flow between the source and the drain.

The STD7NM50N can be used in a range of applications such as in converters, inverters, motor controls, home appliances, consumer electronics, smart homes and industrial equipment. It can also be used to switch large currents and can be used to drive inductive loads such as motors and solenoids. The low on-resistance of the device makes it suitable for high-frequency and high-performance applications.

The device is specially designed to guarantee over temperature stability and robustness against noise and transients. Due to its low on-resistance, it can be used in low-power applications for energy efficiency. The device also has an extremely low maximum capture/turn-off time and safe operating area(SOA) to ensure reliability and high switching performance.

In conclusion, theSTD7NM50N is a low-cost and rugged N-channel FET which can be used in a variety of applications from 12V to 500V. The device has a low gate-drain charge, low gate-source voltage, good power capability and low gate-switch charge. The low switching frequency and low gate-source capacitance make it suitable for high-speed applications. The device also provides reliable and robust performance in noise and transient environments and is capable of switching large currents. The low on-resistance of the device also makes it suited for low-power applications.

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