STD7NK40ZT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-6565-2-ND |
Manufacturer Part#: |
STD7NK40ZT4 |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 400V 5.4A DPAK |
More Detail: | N-Channel 400V 5.4A (Tc) 70W (Tc) Surface Mount DP... |
DataSheet: | STD7NK40ZT4 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.38716 |
Series: | SuperMESH™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 70W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD7NK40ZT4 is a high-voltage, low-voltage, and low on-state resistance N-channel enhancement-modePower MOSFET. It is suitable for applications such as DC-DC converters, inrush current limiters, and driver circuits. This MOSFET offers a very low on-state resistance and is capable of operating at a wide voltage range. The STD7NK40ZT4 is optimized for use in DC-DC converter, AC-DC converter, motor driver, and other power switching applications.
Features
- High-voltage operation (900V)
- Low-voltage operation (3.3V)
- Low on-state resistance
- Integrated protection diode
- Small surface mount package
- Operating temperature range of -55C to +125C
Applications
- DC-DC converters
- AC-DC converters
- Motor drivers
- Inrush current limiters
- Voltage regulator modules
Working Principle
The working principle of a MOSFET is basically the same as that of a BJT. A MOSFET is composed of a source, drain, gate, and substrate. The source and drain have one side in contact with the gate, which is the control terminal. When the gate is activated, a positive charge (typically from a battery or power source) flows through the gate, creating an electric field between the gate and drain. This electric field then creates an inversion layer, which enables current to flow from the source to the drain. The magnitude of this current flow is determined by the gate voltage.
The STD7NK40ZT4 is specifically designed to allow a low on-state resistance while providing excellent breakdown voltage performance. This is achieved by a lower threshold voltage combined with a higher gate-drain breakdown voltage. The low on-state resistance of the STD7NK40ZT4 allows a large current to flow through it with a low voltage drop, making it well-suited for applications requiring high current and low voltage input signals. Additionally, due to its integral protection diode, it can be used in situations where a high voltage transient may occur.
Conclusion
In conclusion, the STD7NK40ZT4 is a versatile MOSFET designed for use in high-voltage, low-voltage, and low on-state resistance applications. Its low on-state resistance makes it suitable for use in DC-DC converter, AC-DC converter, motor driver, and other power switching applications. Additionally, its integrated protection diode allows it to be used in situations where a high voltage transient may occur.
The specific data is subject to PDF, and the above content is for reference
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