STD7NK40ZT4 Allicdata Electronics

STD7NK40ZT4 Discrete Semiconductor Products

Allicdata Part #:

497-6565-2-ND

Manufacturer Part#:

STD7NK40ZT4

Price: $ 0.42
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 400V 5.4A DPAK
More Detail: N-Channel 400V 5.4A (Tc) 70W (Tc) Surface Mount DP...
DataSheet: STD7NK40ZT4 datasheetSTD7NK40ZT4 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.38716
Stock 1000Can Ship Immediately
$ 0.42
Specifications
Series: SuperMESH™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
FET Feature: --
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The STD7NK40ZT4 is a high-voltage, low-voltage, and low on-state resistance N-channel enhancement-modePower MOSFET. It is suitable for applications such as DC-DC converters, inrush current limiters, and driver circuits. This MOSFET offers a very low on-state resistance and is capable of operating at a wide voltage range. The STD7NK40ZT4 is optimized for use in DC-DC converter, AC-DC converter, motor driver, and other power switching applications.

Features

  • High-voltage operation (900V)
  • Low-voltage operation (3.3V)
  • Low on-state resistance
  • Integrated protection diode
  • Small surface mount package
  • Operating temperature range of -55C to +125C

Applications

  • DC-DC converters
  • AC-DC converters
  • Motor drivers
  • Inrush current limiters
  • Voltage regulator modules

Working Principle

The working principle of a MOSFET is basically the same as that of a BJT. A MOSFET is composed of a source, drain, gate, and substrate. The source and drain have one side in contact with the gate, which is the control terminal. When the gate is activated, a positive charge (typically from a battery or power source) flows through the gate, creating an electric field between the gate and drain. This electric field then creates an inversion layer, which enables current to flow from the source to the drain. The magnitude of this current flow is determined by the gate voltage.

The STD7NK40ZT4 is specifically designed to allow a low on-state resistance while providing excellent breakdown voltage performance. This is achieved by a lower threshold voltage combined with a higher gate-drain breakdown voltage. The low on-state resistance of the STD7NK40ZT4 allows a large current to flow through it with a low voltage drop, making it well-suited for applications requiring high current and low voltage input signals. Additionally, due to its integral protection diode, it can be used in situations where a high voltage transient may occur.

Conclusion

In conclusion, the STD7NK40ZT4 is a versatile MOSFET designed for use in high-voltage, low-voltage, and low on-state resistance applications. Its low on-state resistance makes it suitable for use in DC-DC converter, AC-DC converter, motor driver, and other power switching applications. Additionally, its integrated protection diode allows it to be used in situations where a high voltage transient may occur.

The specific data is subject to PDF, and the above content is for reference

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