STD7ANM60N

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The STD7ANM60N is a fully isolated Super-junction MOSFET technology designed to provide excellent efficiency and power levels for high current applications. It has an optimized design for switching converters such as DC/DC controllers, off-line AC/DC converters, UPS systems, LED lighting and motor control applications. The integrated cell structure and advanced packaging of the device enable improved thermal properties making it ideal for compact and high-density designs. This device series is suited for applications that require a high level of efficiency, low switching and conduction losses, and excellent thermal performance.

The fundamental operation of the STD7ANM60N is based on the MOSFET technology, which uses an insulated-gate field effect transistor (IGFET). This insulated-gate provides very high blocking voltage, while producing very low on-state resistance. This combination of features makes the MOSFET device popular for high current operations such as power switching. The MOSFET works on a simple principle that when a voltage difference is applied between the gate and the source of the MOSFET transistor, the field in the depleted region increases. This causes the depletion region capacitance to increase, thus turning the MOSFET off. Reversing the polarities of the gate and source voltages reverses the field effect, allowing current to flow through the MOSFET.

The STD7ANM60N provides an improved power level due to its large area (700µm x 700µm) Super-junction structure. This larger area structure provides an increased current carrying level, due to the increased lateral spreading. The device also has a high frequency pulsed on-state current, which improves the efficiency in applications with high switching frequencies. The device comes in an advanced package with superior thermal performance, making it ideal for applications with high thermal loads. The device also has low gate charge, making it ideal for applications with high switching frequencies.

The STD7ANM60N MOSFET is ideal for DC/DC controllers, AC/DC converters, UPS systems, LED lighting and motor control applications. Its efficiency is improved with its high frequency pulsed on-state current making it ideal for applications with high switching frequencies. Its large area Super-junction structure provides an improved power level and superior thermal performance, allowing the device to be better suited for high-thermal and high-density applications. The device also has low gate charge, which makes it ideal for applications with high switching frequencies.

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