STD70N10F4 Allicdata Electronics

STD70N10F4 Discrete Semiconductor Products

Allicdata Part #:

497-8806-2-ND

Manufacturer Part#:

STD70N10F4

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 60A DPAK
More Detail: N-Channel 100V 60A (Tc) 125W (Tc) Surface Mount DP...
DataSheet: STD70N10F4 datasheetSTD70N10F4 Datasheet/PDF
Quantity: 12400
2500 +: $ 0.49427
Stock 12400Can Ship Immediately
$ 0.54
Specifications
Series: DeepGATE™, STripFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
FET Feature: --
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The STD70N10F4 is a power MOSFET, specifically a n-channel enhancement mode Silicon Gate Field Effect Transistor, that is widely used in a variety of applications. It is specific to N-Channel field effect transistors (FETs), which are a type of transistor that relies on an electric charge to open and close a gate to allow a current to flow.

The STD70N10F4 model has a convenient design, featuring a single package and operating temperature range of -55° to 150°C. It also has a fast switching speed with a typical on-resistance between 7.2 to 12.2 Ω. This makes it a great choice for high-current applications.

This power MOSFET is used in many high current and low voltage applications such as HVAC systems, motor controls, power supplies, chargers, switches, and dimmers. In these applications, the STD70N10F4 offers better protection from electrostatic discharge than regular MOSFETs. It also has a smaller on-state resistance; this offers greater reliability and better heat dissipation for high-current applications. The device will also safely and reliably handle load currents of up to 10 A.

The STD70N10F4 is a very reliable device and is rated up to an operating temperature of up to 150°C due to its fast switching speed and low on-resistance. Its low on-resistance and quick switching rate also make it highly efficient and it can handle large surge currents due to its low RθJ-C (junction-to-case thermal resistance).

The STD70N10F4 is an enhancement mode FET, which allows a current to flow through it when a positive voltage is applied to the gate. This is due to the n-channel, which is the hole that the electrons travel through when the FET is activated. It works by allowing the excess electrons to be pulled away from the source, creating a depletion layer that increases the resistance in the channel and allowing the current to flow.

The STD70N10F4 is a high-powered FET that is used in a variety of high-voltage, high-current applications. Its reliable performance, convenient single package design, and fast switching speed make it an ideal choice for power management, HVAC systems, motor control, and energy storage. applications. It is also highly resistant to electrostatic discharge and its low on-state resistance offers better heat dissipation and greater reliability, making it the perfect device for high-current applications.

The specific data is subject to PDF, and the above content is for reference

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