Allicdata Part #: | 497-8807-2-ND |
Manufacturer Part#: |
STD7NM80 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 6.5A DPAK |
More Detail: | N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DP... |
DataSheet: | STD7NM80 Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 1.13317 |
Series: | MDmesh™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 3.25A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 90W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The STD7NM80 is a type of Power MOSFET with single-channel. The great features and applications of the STD7NM80 make it a great choice for various types of electronics that needs high performance transistors. In this article, we will explore the application fields and working principles of the STD7NM80.
Application Fields
This device is quite versatile and can be used in many applications. The maximum breakdown voltage ranges from 75 to 79 V, making it suitable for various low-voltage applications such as TVs, DVD players, and HiFi systems. Other possible applications include switching circuit applications, audio amplifiers and audio/video equipment. Overall, the STD7NM80 can be used for a wide range of low-voltage applications, from consumer products to automotive applications.
Principle of Operation
The STD7NM80 uses an N-channel MOSFET structure to achieve its performance. A MOSFET is essentially a field effect transistor (FET) in which the conductance is controlled by the gate voltage. This means that the flow of current from the source to the drain is controlled by the gate voltage. The gate is connected to a capacitor which can be used to adjust the voltage across the MOSFET. The device also contains a resistor to limit the amount of current flowing through the drain. When the gate voltage is increased, the resistance of the MOSFET decreases, allowing more current to flow through it.
Advantages of the STD7NM80
The STD7NM80 Power MOSFET has a number of advantages over other transistors. It has a low on-resistance, making it more power efficient than many other transistors. It also has a high switching speed, allowing it to switch currents quickly and efficiently. Additionally, the MOSFET has a low capacitance, which helps reduce power consumption as well as reduce interference with other electronics. Finally, its low gate voltage is a plus for power efficiency, as power is only consumed when the voltage is higher than the threshold.
Conclusion
The STD7NM80 Power MOSFET is a great choice for a wide range of low-voltage applications, from consumer products to automotive applications. Its low on-resistance and high switching speed make it very power efficient, and its low capacitance helps reduce power consumption and interference. Its low gate voltage also helps reduce power consumption. Overall, the STD7NM80 is a great choice for those looking for a high-performance transistor.
The specific data is subject to PDF, and the above content is for reference
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