STL13DP10F6

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STL13DP10F6 is a type of transistor array, composed of four N-channel Enhancement-Mode MOSFETs (EFETs). This type of transistor array is commonly used in power management, DC to DC conversion and power factor correction. The STL13DP10F6 is designed for a wide range of switching applications, where high current levels, wide input voltage and low power losses are required.

The configuration of the four MOSFETs in the array allows the user to switch between two high voltage states. The state of the four MOSFETs is controlled by a logic signal. When the logic input is high, the four MOSFETs are switched off, so that current cannot flow through the transistor array. When the logic input is low, the four MOSFETs are switched on, allowing current to flow through the transistor array.

The high voltage capability of the four MOSFETs in the array allow the user to switch between input voltages from zero to an absolute maximum of 700 volts. The maximum current flows through the array is limited by the sum of the four MOSFETs’ maximum current. In the switching mode, the continuity of current through the transistor array is ensured by the inherent back-to-back diode protection of the four MOSFETs.

The main feature of the STL13DP10F6 is the presence of a gate drive circuitry, which allows the user to reduce the gate turn-on/off time significantly. This increases the switching frequency of the transistor array and reduces the need for large snubber components. Additionally, the gate drive circuitry provides reverse dv/dt protection, which prevents unnecessary stress on the MOSFETs.

In conclusion, the STL13DP10F6 is an ideal choice for applications which require high voltage switching, high voltage ringing and very low power losses. The presence of a gate drive circuitry provides improved efficiency, reduced switching time and high level of protection of the MOSFETs.

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