STL18N65M2 Allicdata Electronics
Allicdata Part #:

497-15477-2-ND

Manufacturer Part#:

STL18N65M2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 8A POWERFLAT
More Detail: N-Channel 650V 8A (Tc) 57W (Tc) Surface Mount Powe...
DataSheet: STL18N65M2 datasheetSTL18N65M2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6) HV
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 764pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 365 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL18N65M2 is a high-voltage, high-current MOSFET (metal-oxide-semiconductor field-effect transistor) device specifically designed to provide superior switching performance, while offering excellent withstand voltage characteristics with a low on-state resistance. This device, along with other MOSFETs, is used in numerous applications where high current can be easily switched using a voltage signal.

Applications of the STL18N65M2 are varied and include switching load and power control, IR control applications such as remote-control toys, and motor controls. Furthermore, this device can be utilized in power supplies, solar inverters, OLED power supplies, and power converters. The device is well-suited for applications that require high-frequency switching performance, precise control, and zero voltage switching.

The working principle of a MOSFET is based on its gate-source voltage (Vgs). It has no control current flowing through the gate, as a result, even small gate-source voltages can control the current flow. This allows for precise control of the current with a small voltage signal, typically from less than a few volts to hundreds of volts. When a small positive voltage is applied to the gate, electrons are attracted to the oxide layer and travel through the device, thus, allowing current to flow. When the voltage is removed, the electrons repel and the device no longer allows current to flow.

The best way to maximize the power of MOSFETs is to use them in switching applications. This type of application exploits the ability of MOSFETs to switch on and off quickly, as well as their good switching characteristics, such as low switching losses, low noise, and high duty cycles. In addition, their ability to operate over an extended range of voltage levels allows for economical power solutions.

The STL18N65M2 is designed to operate with superior switching performance. It provides an ID rating of 18 Ampere and an R DS(ON) rating of 6.5 milliohms. It also has a high withstand voltage of 650 Volts, allowing it to provide excellent withstand voltage characteristics. This device can be easily used in high-voltage and high-current applications that require precise control and superior switching performance.

In conclusion, the STL18N65M2 is a high-voltage, high-current MOSFET device that allows for precise switching between high and low current states. Its superior voltage and current characteristics allow it to be used in a wide range of applications, such as switching load and power control, remote-control toys, motor controls, and power supplies. Furthermore, its ability to switch quickly and with good switching characteristics make it an ideal solution for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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