STL100N8F7

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STL100N8F7 Application Field and Working Principle

The STL100N8F7 is a high-performance, low-cost Field Effect Transistor (FET) designed to offer efficient operation and higher power dissipation over conventional FETs. The device is a single FET, with a source-channel-drain (SCD) structure, and it is typically used as an output stage in analog, digital and switching circuits. Its main application is to amplify and control large amounts of power.

Features and Benefits

• High Power Dissipation – the overall power dissipation is up to 2.1W per device.
• Low On-Resistance (RDSon) – this helps reduce power losses, thus improving the efficiency of the device.
• High Frequency Operation – the STL100N8F7 can operate at frequencies up to 460MHz.
• High Output Current – the output current of the device is up to 42A.
• Increased Noise Immunity – the device has a very low input capacitance for better noise immunity.
• Minimum Input Capacitance – the device has a low input capacitance of only 8.2pF, which improves the efficiency of the device.
• Low Gate-Source Voltage – the gate-source voltage can be as low as 5V.
• Low Gate Threshold Voltage – the gate threshold voltage can be as low as 2.5V.
• High Reverse Transfer Capability – the STL100N8F7 can handle up to 25A of reverse transfer current.
• High Thermal Stability – the device has a low thermal resistance which improves the overall device stability and performance.

Applications

The STL100N8F7 is designed for high-power switching and amplification applications. It is commonly used in various industrial, automotive, and aerospace applications. It can also be used in synchronous rectifier drivers and current- and voltage-controlled switchers, as well as amplifiers, comparators, and high-speed switching systems.

Working Principle

The working principle of the STL100N8F7 is based on the principle of field effect transistor (FET) operation. A FET is a three terminal device that uses an electric field to control the flow of current. It has two electrodes, a source and a drain, and one gate. The gate is used to control the current flow between the two electrodes. When a small voltage is applied to the gate the current flow is increased and when the voltage is removed the current flow decreases. This makes the FET an ideal device for controlling large amounts of power.

In the case of the STL100N8F7, it is a single FET with a source-channel-drain (SCD) structure. This means that the source electrode orients directly towards the channel, which connects the source and the drain electrodes. When an external voltage is applied to the gate of the device, the gate-source voltage (Vgs) induces a channel under the surface of the gate below the source. This channel forms a connection between the source and the drain, thus allowing current to flow through the device. The amount of current that flows through the device is proportional to the applied gate voltage. This is the principle behind the operation of the STL100N8F7.

Conclusion

The STL100N8F7 is a high-performance FET designed for high-power switching and amplification applications. It has a high power dissipation, low on-resistance, high frequency operation, high output current, increased noise immunity and low gate-source voltage. It can be used in various industrial, automotive, and aerospace applications, and it is a versatile and reliable device for controlling large amounts of power.

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