STL12N3LLH5 Discrete Semiconductor Products

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STL12N3LLH5 Application Field and Working Principle

The STL12N3LLH5 is a single monolithic, high-voltage, low on-resistance, N-channel, logic level power MOSFET (metal oxide semiconductor field-effect transistor) designed and produced by STMicroelectronics. It is an advanced power transistor with suprisingly high features.

The device operates from -40°C to 150°C under normal conditions and from -55°C to 150°C with increased power dissipation. The STL12N3LLH5 is built on the 0.15-micron process to ensure enhanced performance and optimized on-resistance. It has an impressive gate charge of 10nC and low gate-drain capacitance of 225pF for improved power density.

The main features of the STL12N3LLH5 include low on-resistance and leakage, superior switching performance and greater efficiency. Its low on-resistance of 28mOhm and low gate-source and gate-drain capacitance make it ideal for a wide range of applications. The device is especially suitable for efficient operation in high-voltage, low-temperature environments. The MOSFET also has a low gate-drain charge of 9.2nC per transistor, making it suitable for applications requiring both high-efficiency and low-noise switching.

The STL12N3LLH5 operates at a maximum voltage of 130V and a low threshold voltage of 1V. It is available in a wide range of packages such as D2-PAK, DI-PAK and TO-220. This single monolithic, high-voltage, low on-resistance, N-channel MOSFET is used in various fields such as lighting, industrial and automotive applications. It is also widely used in high power switching applications where low on resistance and high blocking voltage is necessary.

The working principle of the STL12N3LLH5 is similar to other MOSFET transistors. The MOSFET works by using a MOS capacitor instead of a traditional capacitor to change the voltage at the gate. When the voltage at the gate is increased, the control resistance between the source and drain is lowered and the current through the channel is increased. The resistance between the Drain and Source terminal is known as the ON-resistance or RDS ON.

When the gate voltage is lowered, the channel is reverse biased and the device enters the off state. The channel is completely closed at this point, no current can flow through it and the device is said to be in the Cut-off region. This level of control makes the MOSFET ideal for power management applications.

The STL12N3LLH5 is an ideal solution for high-efficiency and low-noise power management applications. With its low on-resistance, low gate-drain charge, and low gate-source and gate-drain capacitances it can provide excellent switching performance and efficiency in environments such as lighting and industrial applications. Thanks to its high-voltage operation, extreme temperatures operation, and wide range of packages, the device can handle a wide range of applications.

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