STL11N4LLF5

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.9W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1570pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12.9nC @ 4.5V
Series:	STripFET™ V
Rds On (Max) @ Id, Vgs:	9.7 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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STL11N4LLF5 is an N-channel enhancement-mode Dual Field-Effect Transistor (Dual-FET) produced with a planar construction technology. This device offers a self-aligning thermally efficient package that results in lower thermal resistance and better performance over temperature. The STL11N4LLF5 device is well suited for power management and other applications in the field of power conversion and for any other applications that require accurate shift control and stable performances over temperature conditions.

Description

The STL11N4LLF5 device is an N-channel dual field effect transistor with a self-aligning thermally efficient package. This unique design provides superior performance over temperature conditions, which is critical in applications that require highly accurate shift control, making it ideal for power conversion and power management applications.

Features

The STL11N4LLF5 device has several benefits that make it the ideal choice for power conversion and power management applications. These include:

• Low on-resistance: This allows for high efficiency power conversion and power management applications, which face the requirements of high current and low voltage drop.
• High reliability: With a maximum operating junction temperature of 150°C, this device ensures long-term stability and reliability.
• High temperature operation: This device can operate at temperatures up to 150°C, providing improved performance over temperature.
• Adjustable Gate Threshold Voltage: This ensures a wide range of voltage regulation, making the device suitable for a variety of applications.
• Low Package Cost: This device is offered in an inexpensive, thin, small and lead-free package.

Applications

The STL11N4LLF5 device is ideal for use in the following applications:

• Power conversion
• Power management
• DC-DC conversion
• Telecommunications
• Automotive
• High efficiency applications

Working Principle

The STL11N4LLF5 device is a dual field effect transistor, meaning that it has two p-type and n-type semiconductor regions. This device is capable of switching or controlling a current or voltage.The operation of a dual FET is simple and is based on the principle of ohmic conduction. When a gate voltage is applied to the FET device, electrons in the n-type semiconductor region are repelled, leaving holes in this region. This forms a conducting channel between the n-type and p-type regions. This conducting channel allows a current to flow from source to drain, thus controlling the voltage/current.

Conclusion

The STL11N4LLF5 device is an ideal solution for power conversion and power management applications. Its low-on resistance and high temperature operation with an adjustable Gate threshold voltage make it an ideal choice for these types of applications. The device offers a wide range of voltage regulation and is offered in an inexpensive, thin, small and lead free package. With the STL11N4LLF5 device, users can experience improved performance and reliability over temperature conditions, which is essential for high accuracy shift control applications.

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