
Allicdata Part #: | 497-10419-2-ND |
Manufacturer Part#: |
STL150N3LLH6 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET NCH 30V 150A POWERFLAT5X6 |
More Detail: | N-Channel 30V 150A (Tc) 80W (Tc) Surface Mount Pow... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.33979 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4040pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 16.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL150N3LLH6 is a power MOSFET transistor widely used in a variety of application fields. It is a single N-type enhancement mode field-effect transistor, characterized by low drain-source leakage current, low gate-source capacitance, high input impedance, low on-resistance, fast switching speed and micropower loss.
STL150N3LLH6 is mainly used in power conversion tasks, such as offline converters, lighting systems, HVAC, appliance control, automotive and many other applications. This MOSFET can also be used in battery management, motor control and uninterruptible power supply, power supply, automotive accessories and other application fields.
The working principle of STL150N3LLH6 is the classical method of power MOSFETs and can be described as a two-terminal switch controlled by a voltage applied to a third terminal. STL150N3LLH6 is an N-channel MOSFET composed of a semiconductor layer and two resistive electrodes, or gates. One of the resistive electrodes is the drain, and the other is the source. The MOSFET includes a gate (G) gate, which is basically an insulated gate electrode. When a positive voltage is applied to the gate electrode, electrons accumulate under the gate and become the inversion layer of the device. As a result, a conducting channel is formed between the source and drain, thus allowing the current to flow from source to drain.
Furthermore, the formation of the conducting channel allows significantly greater current to be conducted than if the device was conservatively operated. With the help of STL150N3LLH6 power MOSFETs, manufacturers are able to create efficient power solutions with excellent power-to-efficiency ratio and reduce power losses in the circuit. In addition, these devices can easily be deployed in applications with harsh environments, such as in automotive and industrial settings.
To sum up, STL150N3LLH6 is a powerful and efficient single N-type enhancement mode FET, characterized by low drain-source leakage current, low gate-source capacitance, high input impedance and low on-resistance. It is mainly used in a variety of power conversion tasks, such as offline converters, lighting systems, HVAC, appliance control, battery management and motor control. The operation of this MOSFET is based on the classic principle of power MOSFETs - the formation of a conducting channel between the source and drain by the application of a positive voltage to the gate electrode.
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