STL120N4LF6AG Allicdata Electronics
Allicdata Part #:

497-16511-2-ND

Manufacturer Part#:

STL120N4LF6AG

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 120A POWERFLAT
More Detail: N-Channel 40V 120A (Tc) 96W (Tc) Surface Mount Pow...
DataSheet: STL120N4LF6AG datasheetSTL120N4LF6AG Datasheet/PDF
Quantity: 1000
3000 +: $ 0.78246
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 25V
Vgs (Max): 40V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: Automotive, AEC-Q101, STripFET™
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL120N4LF6AG is a type of single N-Channel enhancement-mode Field Effect Transistor (FET). FETs are transistors that utilize an electric field to activate a current flow. It is generally used in a wide range of applications, including audio amplifiers, digital logic circuits, and analog circuits. The N-Channel MOSFETs have lower power consumption than P-Channel ones, making them ideal for battery-operated devices. It also provides higher resistance in the off-state, which allows it to switch faster.

Specifically, the STL120N4LF6AG is a N-Channel enhancement-mode MOSFET that comes in a TO-252-3 package. It has a drain current rating of 12A, a drain-to-source breakdown voltage rating of 120V, and an on resistance of 4 mOhms. The device has an operating temperature range from 0°C to 150°C and a storage temperature range from -65°C to 175°C. The device is specifically designed to withstand up to 12A of continuous drain current at 25°C. The device is RoHS compliant and 100% Lead (Pb) Free.

The operating principle of the STL120N4LF6AG is very simple. When a Gate voltage is applied to the FET, it induces a negative charge on the body, which in turn causes a depletion of electrons in the region between Drain and Source effectively limiting the current flow through it. The amount of current that flows through the FET is determined by the Gate to Source voltage (VGS). When the VGS is increased, the current flow increases, and when the VGS is decreased, the current flow is reduced. This makes the FET very useful in voltage-regulated devices.

The STL120N4LF6AG is well suited for a variety of applications, such as signal amplification, signal conditioning, motor control, and power conversion. It is often used in low-voltage DC to DC converters, such as buck converters or boost converters. It is also ideal for audio amplifiers, since it has a high current handling capability and low on resistance. The device is also commonly used in low-frequency switching applications, such as lamp dimmers.

The STL120N4LF6AG is a versatile and cost-effective device. It is an excellent choice for designers who need high current switching capabilities in a smaller form factor. The device’s fast switching speed and high breakdown voltage rating make it ideal for power conversion and signal conditioning in a variety of applications. The device’s small footprint and RoHS compliance also make it an attractive choice for engineers interested in creating more efficient designs.

The specific data is subject to PDF, and the above content is for reference

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