
Allicdata Part #: | 497-12599-2-ND |
Manufacturer Part#: |
STL15N3LLH5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 15A POWERFLAT |
More Detail: | N-Channel 30V 15A (Tc) 2W (Ta), 50W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±22V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STL15N3LLH5 is an advanced MOSFET transistor, manufactured by STMicroelectronics, part of the N-Channel Enhancement Mode Field-Effect Transistor (ENFET) family. It is thus a single-channel device featuring low on-resistance, low threshold and high switching speed, making the STL15N3LLH5 an ideal choice in applications where power dissipation and control performance are of utmost importance.
The main application fields of the STL15N3LLH5 include power converters, high-power servo-motors, three-phase and variable-frequency drives, and various other high power/switching power applications including inverters, dc-dc converters and LED lighting. The STL15N3LLH5 transistors can also be used in battery-powered low-voltage and linear applications, such as charger and thermal control circuits.
The working principle of the STL15N3LLH5 is similar to that of other ENFETs. The central source drain voltage drives a current through the MOSFET, by passing negative charges across the body region of the transistor. This current is then modulated by the gate voltage, allowing the enhancement mode MOSFET to modulate power via its gate. The gate\'s operating voltage range should be kept within certain limits, as the MOSFET may be damaged if too much voltage is applied to it.
The STL15N3LLH5 is capable of extremely efficient power management, thanks to its low on-resistance and breakdown voltage. With its 1.2 V to 5.5 V gate source threshold operating voltage range, the ability to switch off a device is high, making it an ideal choice for use in space-constrained designs. The device offers a breakthrough RDS(on) of 0.0075 Ω at 4.5 V and combines it with low gate charge, allowing the transistor to handle higher currents than other competing MOSFETs in the same power range.
In terms of performance, the STL15N3LLH5 transistor can switch as fast as 8 ns, providing a high power density with tight process control over current. The high-speed switching makes the device suitable for use in high frequency applications, such as power converters, motor drivers and frequency inverters, helping reduce total system size and cost. Using Schottky diodes for parallel modes, the device can handle up to 5A at 7V, which is a great improvement compared to other 2A and 5A devices from the same family.
With its high performance and numerous application fields, the STL15N3LLH5 is suitable for various power products, helping reduce system design complexity, cost and size. Its low RDS(on) and switching speed make it an ideal choice for high-power, space-constrained applications, such as a power converters and motor drivers.
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