Allicdata Part #: | STL11N60M2-EP-ND |
Manufacturer Part#: |
STL11N60M2-EP |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V PWRFLAT 5X6 |
More Detail: | N-Channel 600V Surface Mount PowerFlat™ (5x6) HV |
DataSheet: | STL11N60M2-EP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.66705 |
Series: | MDmesh™ M2-EP |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (5x6) HV |
Package / Case: | 8-PowerVDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STL11N60M2-EP is a high power single N-channel MOSFET, designed for improved power efficiency and high switching frequencies. It is a high performance multi-sector SMPS (Switched-Mode Power Supply) controller enablement IC, manufactured by STMicroelectronics. This MOSFET is suitable for a wide range of applications, such as power converters, motor drives, and HDTV power supplies.
The STL11N60M2-EP has a low drain-source on-resistance and a low gate charge, resulting in excellent power efficiency as well as low switching losses. This makes the MOSFET very suitable for high current applications that require high switching speeds. The device also comes with a highly optimized ESD (Electro Static Discharge) protection, ensuring that the STL11N60M2-EP can be used in a wide range of industrial and consumer applications. The device includes an integrated bootstrap diode, which helps to reduce the controlling power losses while increasing the reliability of the system.
The STL11N60M2-EP offers excellent thermal performance, with a low on-resistance even at high drain current ratings. Its drain-source linear mode resistance is very low, making it an ideal solution for applications involving either N-channel or P-channel controllers. The integrated ESD protection feature offers enhanced reliability for low power SMPS applications as well as mobile DC systems. Additionally, the STL11N60M2-EP has a small package size, making it very suitable for applications in a confined space.
The STL11N60M2-EP has a simple design and is easy to implement in a wide range of power applications. It operates with a gate-source voltage of 10V and incorporates a fast recovery ultra-low resistance P-end. This simplifies the design of the magnetics and decreases the losses associated with the transformer, making the system more power efficient. When combined with a few additional active components, the STL11N60M2-EP can be used to drive high-speed switching applications such as motor drives and power converters.
In summary, the STL11N60M2-EP is a high performance multi-sector SMPS controller enablement IC, suitable for a wide range of applications. It offers excellent power efficiency, high switching frequencies, and ESD protection. Furthermore, the device’s integrated bootstrap diode reduces controlling power losses and helps to increase the reliability of the system. Overall, the STL11N60M2-EP is an ideal solution for high current and high switching speed applications.
The specific data is subject to PDF, and the above content is for reference
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