STL16N1VH5 Allicdata Electronics
Allicdata Part #:

497-11846-2-ND

Manufacturer Part#:

STL16N1VH5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 12V 16A POWERFLAT
More Detail: N-Channel 12V 16A (Tc) 2W (Ta), 50W (Tc) Surface M...
DataSheet: STL16N1VH5 datasheetSTL16N1VH5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 500mV @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 12V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 4.5V
Series: STripFET™ V
Rds On (Max) @ Id, Vgs: 3 mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STL16N1VH5 is an advanced high-performance N-Channel enhancement mode MOSFET. This transistor is typically suitable for switching applications and can be used in consumer, industrial and automotive electronics. In addition, it functions as a voltage-controlled resistor, voltage-controlled current source, or a frequency converter. This versatile device has a wide range of applications, from consumer electronics and low-power circuits to high-power switching applications.

The basic structure of the STL16N1VH5 consists of three terminals: source, gate and drain. The source terminal is where the current enters the transistor and the gate terminal controls the current flow from the source to the drain. The drain terminal is the output terminal of the transistor, and it is where the current leaves the device. The gate voltage controls the current flow between source and drain and therefore can be used for switching purposes. Additionally, the STL16N1VH5 has an integrated gate-source resistor, which is used to reduce the gain of the circuit and to minimize power consumption.

The major operational characteristics of the MOSFET transistors are the threshold voltage, saturation current and gate-source capacitance. The threshold voltage is the voltage required between the gate and source terminals to turn on the transistor. The saturation current is the maximum current that can be passed through the device without it entering into saturation. The gate-source capacitance is the capacitance between the gate and source terminals that increases as the drain-source current increases. For the STL16N1VH5, the typical threshold voltage is -4V and the typical saturation current is 22A.

The STL16N1VH5 is a powerful device that is suitable for a wide range of applications, from consumer electronics to high power switching. It can be used in low power circuits and is also highly effective in high power switching applications. It has a high input impedance and a low on-state resistance that make it suitable for switching applications. Additionally, because it has an integrated gate-source resistor, it can be used to reduce the gain of the circuit and to minimize power consumption. It is versatile and reliable, making it a great choice for a variety of applications.

In summary, the STL16N1VH5 is an advanced, high-performance N-Channel enhancement mode MOSFET. It is suitable for a wide range of applications, from consumer electronics to high power switching. It has a threshold voltage of -4V and a saturation current of 22A and has an integrated gate-source resistor that can be used to reduce the gain of the circuit and to minimize power consumption. This device has a wide range of applications, making it a reliable and versatile choice for a variety of circuit needs.

The specific data is subject to PDF, and the above content is for reference

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