STL18NM60N Allicdata Electronics
Allicdata Part #:

497-11847-2-ND

Manufacturer Part#:

STL18NM60N

Price: $ 1.44
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 6A POWERFLAT
More Detail: N-Channel 600V 2.1A (Ta), 12A (Tc) 3W (Ta), 110W (...
DataSheet: STL18NM60N datasheetSTL18NM60N Datasheet/PDF
Quantity: 1000
3000 +: $ 1.31048
Stock 1000Can Ship Immediately
$ 1.44
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (8x8) HV
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 310 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL18NM60N is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) primarily designed for switching applications. These FETs (Field Effect Transistors) are manufactured using the rugged and reliable Super Junction technology that enables best in class switching performance for any given RDS(on) rating in a given electrical configuration. These FETs are housed in a surface mount package.

This MOSFET has an impressive drain-source voltage rating of 60V in spite of the small form factor. It also carries a high current carrying capacity of 18A and maximum power dissipation of 58W.

Working principle

The FET, like many transistors, has three terminals; source, gate, and drain. The operation of an FET is based on an electric field which, when applied, controls the flow of current between the source and drain. When no voltage is applied to the gate, the drain and source are almost completely resistant to current and the transistor is said to the be “off”. When the gate of the FET is charged with a voltage, the region between the source and drain becomes conductive and the transistor is said to be “on”. The voltage applied to the gate determines how much current can flow between the source and the drain.

Application fields

Due to its high current carrying capacity and small form factor, the STL18NM60N is suitable for applications such as consumer electronics, communication systems, industrial applications, and automotive applications.

The FET is a highly suitable choice for consumer electronics following its compact size, low thermal resistance, and low voltage rating. Various consumer electronics require the usage of FETs, such as smartphones, gaming systems, and home audio devices, as these require reliable and steady energy transfer with little energy loss.

Communication systems also benefit from FET usage for their ability to transmit signals without interference. Moreover, FETs can be used for tuning antennas as it can regulate oscillator output more accurately than a binary switch.

Industrial applications require the use of FETs due to their ability to store and transfer energy efficiently. These applications include electric motor speed regulation, robotics and automation, and AC/DC converters.

Automotive applications also benefit from the use of FETs as they require small switches that can handle high currents in order to power features such as power seats, seat heating, electric windows, etc. There are also applications in automotive gyroscopes, fuel injectors and electric motor actuators.

Conclusion

The STL18NM60N is a N-channel MOSFET primarily designed for switching applications. It has three terminals; source, gate, and drain. These FETs are used for a variety of applications, such as consumer electronics, communication systems, industrial applications and automotive applications due to its efficient energy transfer, ability to transmit signals without interference, ability to store and transfer energy, and ability to regulate oscillator output more accurately.

The specific data is subject to PDF, and the above content is for reference

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