STL105NS3LLH7 Allicdata Electronics
Allicdata Part #:

497-14986-2-ND

Manufacturer Part#:

STL105NS3LLH7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 27A PWRFLAT56
More Detail: N-Channel 30V 105A (Tc) 62.5W (Tc) Surface Mount P...
DataSheet: STL105NS3LLH7 datasheetSTL105NS3LLH7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 1mA (Min)
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Series: DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STL105NS3LLH7 is a single high-voltage MOSFET, commonly used in a variety of applications including industrial, farm and machine tools, automotive electronics, and telecom/datacom systems. It is also suitable for general purpose switching and linear applications, as well as power supply applications.

Application Field

The maximum drain-source voltage of this MOSFET is 600V, and its on-resistance is typically 39 milliohms. It can handle up to 5.5A of continuous drain current, and dissipates 3.2W of power. This makes it an excellent choice for use in high-voltage applications in which very low on-resistance, high blocking voltages, and low power dissipation are required.

This MOSFET has been designed for use in a variety of applications that require low on-resistance, high blocking voltages, and low power dissipation. Common applications include DC-DC converters, motor control, lighting control, power management, motor control, and general power switching. Additionally, it is suitable for automotive and industrial applications that require high-voltage and/or low-power solutions.

Working Principle

MOSFETs work on the same principle as field-effect transistors (FETs). In a MOSFET, the source and drain electrodes are called the “source” and “drain”, respectively. A MOSFET is a unipolar device, meaning it uses only one type of charge carrier (e.g. electrons or holes). The MOSFET consists of a highly doped P-type substrate, with a metal gate electrode on top. When a voltage is applied to the gate, current will flow between the source and drain.

The key advantage of MOSFETs is that they can operate with very low quiescent current, thus allowing them to be used in switching applications where power dissipation is a concern. Additionally, since MOSFETs are unipolar devices, they have low reverse leakage current, and can operate at high frequencies. This means they can switch rapidly and with high efficiency.

The STL105NS3LLH7 is a very efficient single high-voltage MOSFET, and is ideal for a wide range of switching, power management and automotive applications. It features a maximum drain-source voltage of 600V, an on-resistance of typically 39 milliohms, and can handle up to 5.5A of continuous drain current. Additionally, it dissipates only 3.2W of power, making it an excellent choice for energy-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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