
Allicdata Part #: | 497-16678-2-ND |
Manufacturer Part#: |
STL190N4F7AG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A POWERFLAT |
More Detail: | N-Channel 40V 120A (Tc) 127W (Tc) Surface Mount Po... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 127W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL190N4F7AG is a N-Channel enhancement-mode MOSFET which can be used in various applications. Using a low threshold voltage of 1.55V and low total gate charge of 18nC, STL190N4F7AG allows designers to optimize its parameters without sacrificing the performance. In addition, it is an advanced high-voltage and enhanced-speed MOSFET which provides a very low Rdson in the range of 0.7 Ohm to 1 Ohm. It also provides a wide range of operating temperatures ranging from -55°C to 175°C.
Applications
STL190N4F7AG has various applications. The various applications of this device spans from power management, general purpose, automotive and industrial control system. STL190N4F7AG can be used for power management functions in AC/DC and DC/DC buck converters, for general purpose applications such as current regulation, and for automotive and industrial control circuits. It is ideally suited for these applications due to its high voltage capabilities, low on-resistance, low total gate charge, low threshold voltage and wide range of operating temperatures.
Working Principle
A MOSFET is an insulated-gate field-effect transistor that utilizes an insulated gate to control the conductivity of a channel between the source and drain. When voltage is applied to the gate, a depletion region is formed in the region between the source and the drain. The width of this depletion region depends on the applied gate voltage; thus by changing the voltage on the gate, MOSFETs can be used to control the flow of current from the source to the drain. STL190N4F7AG operates in the same way. The voltages applied to the gate, source and drain allow for current to flow between the source and the drain. The on resistance (Rdson) of STL190N4F7AG is controlled by the amount of voltage applied to the gate and can be varied from 0.7 to 1 Ohm depending on the operating temperature.
Advantages of STL190N4F7AG
The STL190N4F7AG offers several distinct advantages. It offers a low threshold voltage of 1.55V which allows it to operate with a low gate voltage at a higher switching frequency. Moreover, it comes with a low total gate charge of 18nC which helps to reduce the amount of current required to switch the device on or off. Other benefits include its wide temperature range of -55°C to 175°C which allows the device to be used in many applications. Lastly, it features a low Rdson in the range 0.7 to 1 Ohm which improves power efficiency and provides lower heat dissipation.
Conclusion
STL190N4F7AG is a N-Channel MOSFET which is ideally suited for applications in power management, general purpose, automotive and industrial control system due to its low threshold voltage, low total gate charge, wide temperature range and low Rdson. Its low Rdson allows for improved power efficiency and lower heat dissipation. By optimizing its parameters, designers can use the device in a variety of applications.
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