STL18N55M5 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STL18N55M5 is a N-Channel Enhancement Mode PowerMOSFET used in a variety of applications. It is an ideal choice for using as a switching regulator in battery-operated applications, or for general purpose power amplification. It is also used to drive lighting and audio systems.

This powerMOSFET is rated for a maximum drain source voltage of 18V and a maximum drain current of 5.5A. It has an on-state resistance RDS(on) of 1.1 Ohms, and a gate threshold voltage of 1.8V. It is designed with a low gate to drain charge QGS and a low gate to source charge QGD.

The STL18N55M5 is typically used in applications such as LED lighting, AC/DC power supplies, DC/DC switching regulators, Class-D amplifiers for audio, and negative regulated high power supplies. This powerMOSFET is also used in switch mode converters with its low gate charge allowing for very fast switching times. Its wide drain to source voltage rating makes it capable of operating at high switching frequencies.

It is important to note that the STL18N55M5 has reverse polarity protection. This protects the device from damage due to reverse voltages and surges, making it more reliable and durable. It also has a very low gate to drain charge (QGS) and a very low gate to source charge (QGD). This helps reduce power dissipation, resulting in lower operating temperatures and cooler operation.

The working principle of the STL18N55M5 is based on the principles of Enhancement Mode MOSFETS (EMOSFET). In an EMOSFET, the electric field created between the source and drain is used to open the switch and turn on the device. This electric field is created by applying a voltage to the gate terminal. The higher the voltage, the higher the electric field and the faster the switch opens. When the electric field dissipates, the switch closes and the device turns off.

The STL18N55M5 is a highly versatile device due to its wide drain to source voltage rating and relatively low on-state resistance. Its fast switching times allow for a wide variety of applications, and its reverse polarity protection ensures reliable operation even when exposed to reverse voltages.

The specific data is subject to PDF, and the above content is for reference