| Allicdata Part #: | 497-12978-2-ND |
| Manufacturer Part#: |
STL120N2VH5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 20V 120A POWERFLAT56 |
| More Detail: | N-Channel 20V 120A (Tc) 80W (Tc) Surface Mount Pow... |
| DataSheet: | STL120N2VH5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 700mV @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PowerFlat™ (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 80W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4660pF @ 15V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 2.5V |
| Series: | STripFET™ V |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 14A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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STL120N2VH5 is a vertical n-channel enhancement mode field effect transistor (FET) that belongs to the transistor family. It has small size and low on-state resistance (RDS(ON)) which grants the devices excellent performance in operating temperature and electrical conduction. STL120N2VH5 is widely applied to high voltage switching, continuous switching, and fast switching circuits.
Features
- 20V VDSS/60V VGS/6A ID
- High current drive capability &low on-state resistance
- Based on n-channel vertical structure
- RDS(ON)=3mω @VGS=5V with high efficiency
- Small size with excellent reliability
- High operating temperature: -55oC to 150 oC
Applications
- Small signal amplifier
- DC motor drive
- Switching power supply
- Variable speed controller
- Power monitoring, protection or regulation
Working Principle
STL120N2VH5 has a vertical n-channel design and it is the most popular structure of FETs. In the structure, electron, hole and other particles would interact with each other according to their polarity and source. When a source in the transistor is applied, it is able to drive current between source and drain.
The working processes of ST124K2VH5 are divided into two parts, which are ON stage and OFF stage. During ON stage, threshold voltage, VTh, is applied to the gate which induces inversion layer and forms between drain and source. The current is then conducted between the two ends and we called it ON state. On the other hand, in OFF stage, VGS is adjusted below its threshold voltage so that no conducting would happen between drain and source.
In addition, RDS(ON) is the minimal on-state resistance which measures the device’s performance in conducting electricity. Normally, effective current conduction allows higher power efficiency of the power source. In the case of STL120N2VH5, its RDS(ON) can reach as low as 3mω @VGS=5V , while the normal operation temperature is -55oC to 150 oC.
To sum up, STL120N2VH5 is an ideal device in providing fast switching, continuous switching and high voltage switching. Its advantages including small size, low RDS(ON) and wide operating temperature make it suitable for application in power supply and motor drive circuits.
The specific data is subject to PDF, and the above content is for reference
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STL120N2VH5 Datasheet/PDF