STL13N60M2

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The STL13N60M2 is a field effect transistor (FET) - more specifically a monolithic silicon N-channel insulated gate (IG) FET - that provides exceptional performance in a wide range of applications. It is typically used in switch-mode power applications, including high-powered relay, thyristor, and diode circuits. It is also used in low-power control circuits, as well as for high power RF amplification.

The N-Channel FET is the most popular type of FET due to its wide variety of applications and its ability to handle higher currents than bipolar transistors. The STL13N60M2 uses an insulated gate to control the current flow through the device. This insulated gate allows the device to remain in an off-state until a voltage is applied to the gate. This process changes the charge distribution within the FET and allows current to flow through the device.

The STL13N60M2 is rated for up to 13 A continuous current and up to 60 V drain-source breakdown voltage. It is a 13 Nm CMOS-level FET which provides a very low on-state resistance of 0.08 ohms and an input capacitance of 150 pF. Due to its relatively low level of power consumption and its high efficiency, the device is ideal for use in switch-mode power applications.

One of the main advantages of the STL13N60M2 is its low EMI emissions. Low EMI emissions mean that the device will not interfere with other electronics in the environment. This is especially important in environments where sensitive electronics are used, such as medical and defense applications. The device also has very high switching speeds, meaning that it can react quickly to changes in the environment.

The STL13N60M2 is a versatile device that can be used in a wide variety of applications. It is particularly useful for switch-mode power control applications, where its low on-state resistance and high efficiency make it ideal for minimizing power consumption and increasing circuit efficiency. It is also used in low-power control circuits, such as for motor speed control, and for RF amplification.

In summary, the STL13N60M2 is a high-performance N-channel FET that can be used in a variety of applications. It is designed to provide a low on-state resistance and a low EMI emission, making it ideal for switch-mode power control applications. Its high switching speeds also make it a great choice for applications that require fast response times. As such, it is an excellent choice for a variety of projects.

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