
Allicdata Part #: | 497-16931-2-ND |
Manufacturer Part#: |
STL13N60DM2 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 600 V, 0.350 OHM TYP., |
More Detail: | N-Channel 600V 8A (Tc) 52W (Tc) Surface Mount Powe... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.60641 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 730pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs: | 370 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL13N60DM2 is a type of field effect transistor (FET) manufactured by STMicroelectronics. As with all FETs, the STL13N60DM2 operates by the application of a voltage to its gate in order to control the current flowing in the channel between source and drain. The STL13N60DM2 belongs to the Single MOSFET family, which makes use of a single Metal Oxide Semiconductor layer as the gate insulation as opposed to multiple junction FETs (MUXFETs) which have separate gate and drain insulators.
The STL13N60DM2 has three pins: the drain (D), the gate (G), and the source (S). When a voltage is applied between the gate and the source, it creates an electric field within the transistor. This electric field causes electrons to be attracted to the gate, creating a conductive channel between the drain and the source. By controlling the voltage applied to the gate, the current flow between the source and the drain can be regulated.
The STL13N60DM2 is a power MOSFET, meaning that it can handle high power applications. It is rated for an drain-source voltage (VDS) of 600V, and a maximum drain current (ID) of 9A, giving it a power dissipation capability of 540 W. Additionally, the STL13N60DM2 has a fast switching speed and can operate in temperatures up to 175 degrees Celsius, making it suitable for high power applications with high heat dissipation.
The most common application for the STL13N60DM2 is in power supply and automotive applications. It is a popular choice for power supplies due to its high current rating, low on-state resistance (RDS-ON) of 1.2 ohms, and low total gate charge (QGD). This makes the STL13N60DM2 well suited for use in power supplies where low power loss is desirable. Additionally, the high switching speed of the STL13N60DM2 makes it suitable for use in high speed applications such as those used in the automotive industry.
In summary, the STL13N60DM2 is a power metal oxide semiconductor FET suitable for high power applications where high current, low power loss and high switching speeds are needed. It has a drain-source voltage rating of 600V, and a maximum drain current rating of 9A, allowing for a maximum power dissipation of 540 W. With its low on-state resistance, fast switching speed, and high temperature operation, the STL13N60DM2 is an ideal choice for power supplies and automotive applications.
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