Allicdata Part #: | 497-14967-2-ND |
Manufacturer Part#: |
STL20DN10F7 |
Price: | $ 0.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET 2N-CH 100V 20A PWRFLAT56 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 20A 62.5W Sur... |
DataSheet: | STL20DN10F7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.75996 |
Series: | DeepGATE™, STripFET™ VII |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 67 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 408pF @ 50V |
Power - Max: | 62.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STL20DN10F7 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) array designed for applications that require a large amount of current in a small area. It is composed of four N-channel MOSFETs placed in a single device. The device was designed to provide high performance as well as low on-resistance (RDS) when used to drive medium-to-high current loads in portable electronics applications. The device also has excellent switching characteristics and is capable of providing improved system efficiencies when used in high frequency circuit applications.
The STL20DN10F7 is designed for use in applications such as dc-dc converters, motor controls, power supplies, and battery chargers. The device can also be used in audio amplifiers and systems where low EMI is desired. This device is suitable for a variety of applications where it is necessary to transmit power efficiently with low power losses.
The STL20DN10F7 is a dual-channel MOSFET array that provides the flexibility to switch two separate load circuits with one array. The two channels are independent and are each able to provide a maximum of 4.9A of continuous current. The device also provides a low on-resistance of 40mΩ per channel which helps to reduce conduction losses. The device is designed for use in applications where a low EMI, high efficiency, and a high current capacity are desired.
The working principle of the STL20DN10F7 is based on the MOSFET structure. In order for the device to operate, a control voltage must be applied to the Gate. When the Gate is at a low voltage, the device is in an “off” or blocking state and the current is blocked from flowing through the drain and source terminals. However, when a higher control voltage is applied to the Gate, the device is switched “on” and the current can then flow through the drain and source terminals. In this case, the on-state resistance of the device (RDS) is determined by the control voltage applied to the Gate. The device also has a low input capacitance enabling fast switching times.
The ST20DN10F7 is a low cost, high performance MOSFET array that is suitable for a variety of applications. It provides a low RDS and enables improved system efficiency with its fast switching times. It is also very suitable for applications where dc-dc converters, motor controls, power supplies, and battery chargers are needed.
The specific data is subject to PDF, and the above content is for reference
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