STL20N6F7 Discrete Semiconductor Products

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The STL20N6F7 is a N-channel, logic-level enhancement field-effect transistor (FET) manufactured by STMicroelectronics. It is amongst the 5251 part family and is used in a variety of applications.

This transistor is a type of FET, which is a type of transistor that works differently than the traditional bipolar junction transistor (BJT). A FET has four terminals called the source, gate, drain, and body. The source is connected to the drain through an insulated channel formed by the gate and the body.

The main difference between FETs and BJTs is the way in which they are turned on. With BJTs, current flows between the emitter and the collector when a voltage is applied between them. With FETs, voltage is applied between the gate and the source and it creates an electric field in the transistor to control the current from the source to the drain.

The STL20N6F7 is an N-channel FET, so the drain is connected to the source and the gate is connected to the source (drain is also connected to gate). An N-channel FET uses a negative charge to turn off the transistor. The main advantage of N-channel FETs is that they can handle higher voltages and currents than their P-channel counterparts.

The STL20N6F7 has a low on-resistance of 0.22 ohms and a maximum drain current of 2.2 amps. It also has a maximum drain-source voltage of 20 volts and a maximum gate-source voltage of 20 volts. It is a logic-level FET, which means that it only needs a small voltage applied to the gate to turn it on. This is useful for applications where the power source has a limited amount of voltage available.

The STL20N6F7 is commonly used in audio amplifiers, motor control circuits, power management and load switching. It is also used to invert signals, isolate signals and control analog signals. In addition, it is used for power regulation and pulse width modulation (PWM).

The STL20N6F7 is an excellent choice for applications requiring a low-voltage, low-power field-effect transistor. Its on-resistance, maximum drain current and drain-source voltage make it ideal for a variety of applications. It is also a good choice for designs where a logic-level FET is needed.

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