STL25N60M2-EP

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STL25N60M2-EP application field and working principle

STL25N60M2-EP is a N-channel enhancement mode MOSFET produced by STMicroelectronics. It belongs to the class of single transistors FETs (Field Effect Transistors). Fields of application include switching applications, load switching and amplifying functions.The device is mainly employed in power conversion and load switching functions, featuring low gate charge, low on-state resistance, and fast switching time.

The STL25N60M2-EP features a 600V dielectric voltage rating and 0.8V maximum drive voltage. Its total gate charge is at 16nC. It has a 1.9Ω maximum on-state resistance.

The working principle of the STL25N60M2-EP is based on the principle of electronics field effect. An electrical field is applied to an insulated layer of electrons by a gate, which determines how current is transmitted from the semiconductor body to the output terminals. As a result of the applied voltage, a channel is formed in the MOSFET, allowing electrons to move through the channel. This allows current to flow into the output terminal, completing the switch circuit.

The device is capable of operating with a wide range of operating temperatures. Its maximum output current is 25A and it is at a 75°C rating. The STL25N60M2-EP is capable of withstanding high dV/dt values and has a low internal gate impedance, allowing it to maintain a high switching speed.

In conclusion, the STL25N60M2-EP is an N-channel enhancement mode MOSFET capable of operating in many fields of application. It features a maximum dielectric voltage of 600V and a maximum drive voltage of 0.8V. It also offers a low on-state resistance and fast switching time, which make it suitable for power conversion and load switching functions.

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