STL210N4F7AG

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The STL210N4F7AG is a N-channel enhancement mode MOSFET commonly referred to as a power FET. It forms part of a family of devices designed specifically to switch high currents (with low voltage loss) in power applications. It is an ideal solution for a wide range of low frequency/low RDS(on) power switch applications.

The STL210N4F7AG is a monolithic four-lead dual N-channel MOSFET, which is designed to provide high power robustness and reliability. This device has a very low RDS (on) and fast switching speed, offering superior performance over conventional N-channel power FETs. Its high power capability and low on-resistance make it an ideal choice for DC-DC conversion, power distribution, and high-side switching applications.

The primary application field of STL210N4F7AG is that it is suitable for medium power on-state applications, such as power distribution, DC-DC conversion, and high-side switching. This device can be utilized in a wide range of operating conditions, with high reliability and very low switch losses. In addition, the STL210N4F7AG is ideal for high power applications as it has low gate charge and low gate-to-source transistor (GESD).

The working principle of STL210N4F7AG is that it utilizes an N-channel verticalchannel MOSFET to provide superior performance over conventional N-channel power FETs. This device has a built-in high-voltage protection diode, which prevents any unwanted voltage spikes or reverse-bias during switching. This is essential for the device’s reliability and protection. The input signal is applied to the gate which is connected to the channel, allowing current to flow. This is a three terminal device, with drain and source terminals connected to the device and a gate terminal connected to the controlling signal.

The STL210N4F7AG is a versatile device and is a good choice for many power switching applications such as DC-DC converters, switched-mode power supplies, and automotive and industrial applications. The FET’s low on-state resistance, low gate charge and fast switching speed provide superior performance, even in the most demanding conditions. The device also has excellent power dissipation, making it well suited for higher power applications. In addition, the device has a low-cost, high-Performance package.

In summary, the STL210N4F7AG is an enhancement mode N-channel MOSFET commonly referred to as a power FET. It is suitable for medium power applications such as power distribution, DC-DC conversion, and high-side switching. The device is extremely reliable and features excellent power dissipation, low gate charge and fast switching speed. Furthermore, it has a low-cost, high-performance package with a built-in high-voltage protection diode.

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