Allicdata Part #: | 497-10961-2-ND |
Manufacturer Part#: |
STL21N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 17A POWERFLAT88 |
More Detail: | N-Channel 650V 17A (Tc) 3W (Ta), 125W (Tc) Surface... |
DataSheet: | STL21N65M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 179 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL21N65M5 is a 650 V, 1.8 ohm, N-channel MOSFET, which is especially designed for applications in switch-mode power supplies. It features a maximum Drain-Source voltage of 650 V, a maximum current of 20 A and a maximum Gate-Source voltage of +/- 20 V. It is suitable for use in both low- and high-power switching applications.
The working principle of the STL21N65M5 is based on the physical behavior of a MOSFET (metal-oxide-semiconductor) transistor. A MOSFET is an electronic component that consists of two or more “gates” or “fingers” that traverse a semiconductor material. When an electric field is applied to the gates, electrons from one gate combine with holes from the other gate, resulting in a conducting channel of charge carriers between the two. The magnitude of this current flow is proportional to the applied voltage, and can be controlled by adjusting the applied electric field.
One of the advantages of using the STL21N65M5 is its ability to operate at a high switching frequency. This makes the component ideal for use in power supplies and other applications where a high switching frequency is required. Additionally, the component features a low gate-source capacitance which ensures a low power dissipation and high efficiency in the power supply circuit. The component also has a low on-state resistance which helps reduce power losses in the power supply circuit.
The STL21N65M5 can be used in a variety of applications, including switch-mode power supplies, DC-DC converters, battery chargers, motor control, and automotive electronics. In addition, the component can also be used as a replacement for other MOSFET components, such as the IRF540N, in applications where a higher breakdown voltage is needed. Additionally, the component can be used as a power switch in industrial motor drives and other power switching applications.
As a result, the STL21N65M5 is an excellent choice for a wide range of applications due to its high switching frequency, low power losses, low gate-source capacitance, and low on-state resistance. Additionally, its ability to operate at a higher-than-usual breakdown voltage makes it a reliable option for industrial and automotive applications. With its variety of features, the STL21N65M5 is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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