STL285N4F7AG Allicdata Electronics
Allicdata Part #:

STL285N4F7AG-ND

Manufacturer Part#:

STL285N4F7AG

Price: $ 1.15
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 120A POWERFLAT
More Detail: N-Channel 40V 120A (Tc) 188W (Tc) Surface Mount Po...
DataSheet: STL285N4F7AG datasheetSTL285N4F7AG Datasheet/PDF
Quantity: 1000
3000 +: $ 1.04087
Stock 1000Can Ship Immediately
$ 1.15
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 188W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: STripFET™ F7
Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL285N4F7AG is a transistor, classified as a field effect transistor (FET) or a metal oxide semiconductor FET (MOSFET). MOSFETs are a type of transistor used in many electronics and logic circuits. The STL285N4F7AG is a single voltage transistor and can be used as an amplifier or as a switch.

The primary application of the STL285N4F7AG is in digital applications, such as digital circuits, digital switching and logic gates. The STL285N4F7AG has a single channel N-MOSFET and can be used as both a logic device and an amplifier. It has an inherently high input impedance and a low voltage drop across its drain-source junction. It is also capable of switching on and off rapidly, making it an ideal choice for digital circuits.

The STK285N4F7AG also has applications in analog systems. It can be used in audio circuits as an amplifier, in high frequency circuits as an oscillator or in switching systems. Its low on-resistance and high switching speed make it an ideal choice where accuracy and reliability are required. As it is a single voltage transistor, it is also suitable for use in high speed circuits and in power supply regulation.

The working principle of the STK285N4F7AG is based on the FET principle. FETs are made up of two terminal devices, the source and the drain. The source and the drain are separated by an insulated gate. When a voltage is applied to the gate, a field is generated around it which affects the conductivity of the channel between the source and the drain. This, in turn, affects the current flowing through the device. A positive voltage applied to the gate results in a decreased conductivity and a negative voltage applied to the gate results in a greater conductivity.

The STK285N4F7AG uses MOSFET technology to deliver high-performance characteristics and features. The transistor features a low on-resistance, low input capacitance and a high switching speed. This makes it ideal for high-speed signal applications, power and switching applications. It also has a very low leakage current and is capable of handling high current spikes without causing damage.

In addition to its excellent electrical characteristics, the STK285N4F7AG also has a small package size, making it ideal for applications with limited space. It is available in both surface mount and through-hole packages and can easily be integrated into any circuit. The STK285N4F7AG is also compatible with all major manufacturing processes, making it suitable for use in a wide range of applications.

In conclusion, the STK285N4F7AG is a versatile and highly reliable FET, suitable for both digital and analog applications. Its low on-resistance and high switching speed make it an ideal choice for high speed circuits, digital logic and switching applications as well as power and switching applications. It is available in a small package size and its low leakage current makes it well-suited for use with high current applications. Additionally, its compatibility with all major manufacturing processes makes it suitable for use in virtually any circuit.

The specific data is subject to PDF, and the above content is for reference

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