STL2N80K5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STL2N80K5 is a n-channel enhancement mode MOSFET transistor (Field Effect Transistor). It was announced by STMicroelectronics in 1992, and the device is the first made of a series of the enhancement mode transistors they\'ve produced with various MOS drain. The product is part of the transistors manufactured with the aim of diversifying product selection and expanding the market base with enhanced features.

The STL2N80K5 features a maximum drain current of up to 8 A at 125°C, and a maximum drain-source voltage of 500 V. Its maximum insulated gate voltage (VGS) is of -20 V, and the gate-source voltage (VGS) is of ±20 V. Product dimensions (L x W x H) are 4.1 x 2.9 x 1.19 mm, and the device is delivered in an US HEP surface mount-style package.

Applications for the STL2N80K5 range from note/minibook computer power supplies, desktop and server computer main power supplies, telecommunications power supply, air conditioning and other precise control equipment application fields that require MOSFET HEP surface-mounted transistors.

Working Principle of STL2N80K5

The STMicroelectronics STL2N80K5 n-channel enhancement mode transistor operates using the principle of a field-effect transistor (FET), where an electric field is used to control the flow of current between the drain and source, as opposed to using an input current to control current flow like in the case of a bipolar transistor. This field-effect transistor has three distinct terminals which are source, gate, and drain. The source and the drain are connected to different electrical elements within the system, while the gate acts as a gatekeeper, allowing the current to pass when it receives the adequate amount of voltage.

When the gate is open (activated), current can pass through freely between the drain and the source. This is known as the "on" or "saturation" state, and the voltage drop over the drain-source is then considered very low. The gate is open (activated) when an electric field is created between the gate and the source and drain terminals. This field is created when a positive voltage, typically in the range of 1V to 10V, is sent to the gate of the device.

When the gate is closed (not activated) no current can pass through the device. This is referred to as the "off" state or "Cut-off". This means that no electric field is present between the gate and the source and drain and the voltage drop across the two terminals is very high.

The STL2N80K5 is able to sustain the maximum drain current of 8 A (at 125°C) due to its high power metal-oxide-semiconductor (MOS) technology, which creates a low resistance between the drain and source. The high voltage is also able to sustain due to the MOS and the dielectric material of the gate oxide, which is composed of silicon dioxide.

The low On-Resistance of the MOS technology makes the STL2N80K5 ideal for application in low power digital circuits, power supply circuits, power amplifiers, and audio amplifiers. It is also able to work effectively in environments with high temperature, making it suitable for use in automotive applications and high-end industrial equipment. Additionally, the transistor is also suitable for use in video applications such as video amplifiers, video high gain audio amplifiers, and television circuits.

In conclusion, the STMicroelectronics STL2N80K5 is an excellent choice for use in a variety of applications. Its unique design and high performance makes it suitable for use in a wide range of applications. The device is ideal for among other things, note/minibook computer power supplies, desktop and server computer main power supplies, telecommunications power supply, air conditioning and other precise control equipment.

The specific data is subject to PDF, and the above content is for reference