Allicdata Part #: | 497-16040-2-ND |
Manufacturer Part#: |
STL23NS3LLH7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 92A PWRFLAT8 |
More Detail: | N-Channel 30V 92A (Tc) 2.9W (Ta), 50W (Tc) Surface... |
DataSheet: | STL23NS3LLH7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.9W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.7nC @ 4.5V |
Series: | STripFET™ H7 |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STL23NS3LLH7 is a N-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is packaged in an industry-standard single-gate package, making it one of the most popular MOSFET designs on the market. This device is ideal for use in power supply circuits, power amplifiers, and switching applications.
Application fields: STL23NS3LLH7 is most commonly used in various power applications. It provides a low-cost alternative for high-power applications such as switching power supplies and amplifiers, motor control applications, and high-current DC/DC converters. It is also used in communication systems, consumer electronics, automotive, audio, and lighting.
Working Principle: A MOSFET works on the basis of a quantum-mechanical physical phenomenon called quantum tunneling effect. As particles of charge (electrons or holes) move through a semiconductor, they encounter a potential barrier that is too high for them to tunnel through. In a MOSFET, this barrier is formed by layers of metal and semiconductor material. When a voltage is applied to the gate terminal, it changes the barrier’s height and allows electrons to pass through it. This causes a current flow from the source terminal to the drain terminal, making the MOSFET a switch.
The STL23NS3LLH7 uses P-channel MOSFETs to switch current. In this type of MOSFET, the channel is formed of electrons instead of holes, which allows for faster switching speeds. The device also has integrated protection circuitry to protect against overvoltage and overcurrent.
STL23NS3LLH7 is an example of a single MOSFET device used in a switching application. This device is capable of providing up to 150mA of continuous current, making it the perfect device for powering large loads such as motors or lighting circuits.
In summary, the STL23NS3LLH7 is a N-channel enhancement mode MOSFET that is commonly used for numerous power applications. Its robust package and integrated protection circuitry make it ideal for applications that require high power and high switching speeds. As one of the most popular MOSFET designs on the market, it is an excellent choice for your next power supply design.
The specific data is subject to PDF, and the above content is for reference
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