STL24N60DM2

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The state of the art technology in transistors often requires more power handling than the traditional FETs and MOSFETs. The STL24N60DM2 is one such device, which has been designed to handle the power and speed characteristics associated with the latest advances in the field. The device is a single FET and MOSFET, and is a valuable addition to the existing family of transistors.

The STL24N60DM2 is a unipolar power MOSFET with a mix between MOSFET and bipolar devices to deliver high performance, efficiency and reliability. It is built with a thick-film design that combines three technologies, N-channel MOSFET with an integrated bipolar transistor array, making it an ideal device for applications that require high current, low power loss and low switching losses. In addition, the device has the flexibility to be configured as a single-channel or multiple-channel switch.

The STL24N60DM2 delivers high performance with its low on-resistance, high linearity and high switching speed. It has an off-state gate leakage current of 1nA and a drain to source breakdown voltage of 600 volts. The package also offers increased thermal performance due to the higher thermal design power and maximum supply voltage. The package has a low package profile and a thermal resistance of 2 - 4oc/w.

The device also offers additional features such as a wide range of resistance ratios from 10mΩ to 100mΩ. The device can also be used to bridge between FET and MOSFET technology, providing high current gains and voltage regulation. It is available in both single and dual package sizes and can be used in a variety of applications including motor control, power supplies, motor management, industrial automation and telecommunications.

The STL24N60DM2 is designed to provide superior performance and reliability in controlling the voltage and current in automotive, lighting, industrial and consumer electronics. It is also suitable for applications that require high speed switching and high performance as well as high efficiency. It is available in single, dual and quad package formats and is compatible with a wide range of circuit designs.

The operation of the STL24N60DM2 is based on the principle of the MOSFET. The drain-source voltage (VDS) is applied across the source terminal, which is connected to the source lead of the device. When this voltage applied across the source terminal is greater than the threshold voltage, a current flows from the source to the drain terminal. The amount of current that flows through the device is regulated by the gate voltage (VGS). By adjusting the gate voltage, the device can be used to regulate the voltage and current across the device.

The STL24N60DM2 is a highly efficient and reliable device and is an ideal choice for high power applications. It provides superior performance and low on-resistance, high linearity and high switching speed, making it an ideal choice for automotive, lighting, industrial and consumer electronics applications. The device provides high efficiency and high speed switching and is also available in single, dual and quad package formats. It is easy to use in a wide range of circuit designs and is compatible with most motor control, power supply, motor management, industrial automation and telecommunications systems.

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