STL23NM50N Allicdata Electronics
Allicdata Part #:

497-13449-2-ND

Manufacturer Part#:

STL23NM50N

Price: $ 1.96
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 2.8A PWRFLT 8X8
More Detail: N-Channel 500V 2.8A (Ta), 14A (Tc) 3W (Ta), 125W (...
DataSheet: STL23NM50N datasheetSTL23NM50N Datasheet/PDF
Quantity: 1000
3000 +: $ 1.78263
Stock 1000Can Ship Immediately
$ 1.96
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (8x8) HV
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 210 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL23NM50N is a general-purpose N-Channel MOSFET, with current ratings up to 23A and voltage ratings up to 50V. It is useful in a variety of high power applications, such as load-switching and motor control. The STL23NM50N has an extremely low on-resistance and its full-rated current can be sustained over a wide temperature range. In order to ensure that its performance does not degrade during the life of the device, its internal protection features are designed for long-term operation in demanding operating conditions.

The main application field for the STL23NM50N is power switching. N-channel MOSFETs are ideal for use as load switches, as they can rapidly turn on and off with low switching losses. Also, since they don’t require large amounts of input or gate current, they can be used with low-power controllers. This makes them an ideal choice for using in motor control, as small changes in the gate voltage can lead to significant changes in the power supply. As the STL23NM50N is an N-Channel device, it can be combined with a P-Channel device to form an H-Bridge, making it useful for motor control applications.

The STL23NM50N operates according to the principle of MOSFETs in general. MOSFETs—metal-oxide-semiconductor field-effect transistors, are devices that control the flow of electric current. They are made up of four layers: the source, the gate, the drain and the channel. The source and drain are the terminals that connect to the external power supply, while the gate is the terminal that is connected to the control signal. The channel is what separates the source and drain, which has a voltage applied to it in order to control the current flow between them.

When the gate voltage is increased, the electric field between the gate and the channel increases, thus allowing more current to flow between the source and the drain. Thus, by changing the gate voltage, it is possible to change the current flowing through the device. This makes MOSFETs very useful in electricity applications, as they can be used to control the flow of electricity, making them useful in power supplies, motor control, and other controlled-current applications.

The STL23NM50N is a particularly versatile MOSFET, as it can operate with both high and low input voltages. It also has an extremely low on-resistance and its full-rated current can be sustained over a wide temperature range. This makes it well suited for many applications, particularly those which require precise power delivery.

In conclusion, the STL23NM50N is a general-purpose N-Channel MOSFET which has current ratings up to 23A and voltage ratings up to 50V. It is ideal for use in a wide variety of high power applications, such as load-switching and motor control. By using the principles of MOSFETs, the STL23NM50N can be used to precisely control the flow of electricity, making it useful in power supplies, motor control, and other controlled-current applications.

The specific data is subject to PDF, and the above content is for reference

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