Allicdata Part #: | 497-13600-2-ND |
Manufacturer Part#: |
STL22N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 650V 15A PWRFLT8X8HV |
More Detail: | N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surfa... |
DataSheet: | STL22N65M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1345pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL22N65M5 is a type of semiconductor device, more specifically an n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is single-ended and can be connected as both an enhancement-mode (E-mode) and depletion-mode (D-mode) device. It is typically used for switching applications such as motor-drive, switching power supplies, audio amplifiers, motor control and other related uses.
A simplified diagram of the basic construction of a MOSFET is as follows: an insulating gate (also known as a gate dielectric) is sandwiched between a source terminal and a drain terminal. A voltage applied to the gate controls the flow of electrons between the source and the drain, hence the celebrated name "field-effect".
In more technical terms the STL22N65M5 is an n-channel enhancement-mode MOSFET that is fabricated on a high speed, low power silicon-gate process. The on-resistance is low and increases when the gate voltage is applied. The maximum drain current is 65A, with a maximum voltage between drain and source of 600V. The maximum power dissipation is typically up to 225W.
In terms of its application areas, the STL22N65M5 MOSFET is used in areas such as motor-drive, motor control, switching power supplies, audio amplifiers, industrial motor control and other similar devices. It\'s ideal for applications that require high current and fast switching, such as in robotics and for automotive systems.
The operating principle of the STl22N65M5 is straightforward. When a positive voltage is applied to the gate-source terminal it turns the device on and electrons flow from the source to the drain. By varying the voltage of the gate-source terminal the current can be increased or decreased. The device can function as either an enhancement-mode device or a depletion-mode device depending on the applied voltage.
The working principle of the device also depends on the body terminal. If the body terminal is connected to ground then the device operates as an enhancement-mode device. When the body terminal is connected to the drain voltage then the device operates as a depletion-mode device.
Overall, the STL22N65M5 is a single-ended, n-channel MOSFET that is suitable for switching applications such as motor-drive, motor control, switching power supplies, audio amplifiers and other related uses. Its on-resistance is low and increases with the applied gate voltage, while its maximum drain current is 65A with a maximum voltage between drain and source of 600V. It is highly reliable and requires very little power to operate.
The specific data is subject to PDF, and the above content is for reference
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