STL24N60M2

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STL24N60M2 is an advanced, low on-state resistance, low threshold voltage n-channel MOSFET designed for digital applications. It is suitable for use in applications that require high efficiency and low power consumption such as DC/DC converter, digital circuit switch and power MOSFET driver. This device has low voltage gate drive, low gate charge and low gate to source creepage distance.

Application field

The STL24N60M2 device can be used in a variety of applications including but not limited to Low Vcc Driving DC/DC Converters, General-Purpose Low-Frequency Switches, Low-Side Power Distribution Switch, High Frequency Converter, and Power MOSFET Drivers. It is suitable for portable and battery-powered devices, such as laptops, cell phones and digital cameras.

Working Principle

STL24N60M2 works based on MOSFET (metal-oxide-semiconductor field-effect transistor) which is a type of field-effect transistor (FET). FETs are two-terminal, voltage controlled semiconductor devices that control the electronic flow between two terminals depending on the voltage applied to the gate of the device. The two terminals are source and drain and the voltage applied to the gate determines whether the transistor is in the on or off state. When the voltage applied to the gate is equal to or greater than the threshold voltage, it is in the On state; otherwise, it will be off state.

The STL24N60M2 is an n-channel, low on-state resistance, low threshold voltage MOSFET. N-channel MOSFETs have the source and drain terminals connected, when voltage is applied to the gate terminal, the electrons are attracted from the source to the gate terminal and then from the gate terminal to the drain as shown in the figure below. This flow of electrons causes current to flow from the source to the drain terminal.

This device has low on-state resistance in the on state, which enables it to pass higher currents when the voltage applied across the two terminals is low. It also has low threshold voltage, which means that the voltage required to turn on the device is lower compared to other similar devices.

The STL24N60M2 also requires low gate charge which helps to reduce switching losses. Furthermore, it has a low gate-to-source creepage distance that helps protect delicate components against high voltage transients.

In summary, the STL24N60M2 device is an advanced, low on-state resistance, low threshold voltage n-channel MOSFET designed for efficient and low power consumption digital application. It is ideal for applications such as DC/DC converters, digital circuit switches and power MOSFET drivers.

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