STL225N6F7AG

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The STL225N6F7AG is a vertical power MOSFET which is designed for power conversion applications such as DC/DC converters, AC/DC converters and high frequency switching applications. This device is manufactured using a high voltage, high current vertical trench MOSFET process. The device has a drain-source breakdown voltage of 225V and a drain-source on-state resistance of 0.0067 ohms. The device is RoHS compliant.

The STL225N6F7AG is a type of insulated gate field-effect transistor (IGFET) which is also known as a metal-oxide-semiconductor FET (MOSFET) or a MOS-controlled field effect transistor. This type of transistor is based on the MOSFET technology, which has two main advantages over the traditional transistor types: the gate terminal can be insulated from the rest of the transistor and the device can operate at very high current densities. The gate terminal is used to control the current flow in the device, allowing for very precise control of current and voltage output.

The MOSFET technology has become increasingly popular for various power conversion applications due to its low on-resistance, fast switching speed and low cost. The low on-resistance makes it possible to reduce the power dissipation and increase the power efficiency of the circuit. The fast switching speed allows for a wider range of frequencies to be used, while the low cost makes it affordable to use the MOSFET technology in a variety of applications.

The STL225N6F7AG can be used in applications such as DC/DC converters, AC/DC converters and high frequency switching applications. It is specifically designed for use in electronic applications that require high current density and low-cost power conversion. It can be used in power modules and motor controllers, inverters, power supplies, AC/DC converters, DC/DC converters, portable electronics and automotive applications.

The working principle of the STL225N6F7AG relies on the application of electrical charge to the gate terminal to control the current flow in the device. The gate terminal is where the electric charge is applied, and it is insulated from the body and source terminals of the device. Applying a voltage to the gate terminal allows for the formation of an inversion region, which acts as a channel for the current flow. This is due to the fact that an electric field is created which attracts electrons from the source terminal to the drain terminal, allowing for the current flow. By changing the voltage applied to the gate terminal, the current flow can be precisely controlled.

In summary, the STL225N6F7AG is a vertical power MOSFET which is designed for use in power conversion applications such as DC/DC converters, AC/DC converters and high frequency switching applications. It is based on the MOSFET technology, which has low on-resistance, fast switching speed and low cost advantages. The device has a drain-source breakdown voltage of 225V and a drain-source on-state resistance of 0.0067 ohms. The working principle of the device relies on the application of electrical charge to the gate terminal to control the current flow in the device. The STL225N6F7AG can be used in a variety of applications such as power modules and motor controllers, inverters, power supplies, AC/DC converters, DC/DC converters, portable electronics and automotive applications.

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