STL26NM60N Allicdata Electronics
Allicdata Part #:

497-11207-2-ND

Manufacturer Part#:

STL26NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 19A POWERFLAT
More Detail: N-Channel 600V 2.7A (Ta), 19A (Tc) 125mW (Ta), 3W ...
DataSheet: STL26NM60N datasheetSTL26NM60N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (8x8) HV
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 125mW (Ta), 3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 185 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STMicroelectronics STL26NM60N is a high-voltage N-Channel MOSFET designed for switch mode power supplies, DC-DC converters, and voltage regulation. This MOSFET has been designed for low RDS(on) and makes it suitable for high frequency switching applications. This device\'s current ratings are typically enough to support most modern switching power supplies without additional power handling components. The STMicroelectronics STL26NM60N features a low threshold voltage and excellent avalanche characteristics that offer superior protection against EOS events.

The STL26NM60N is available in the TO-220 full-pack package with two isolated thermal pads. It is compliant to RoHS 6/6 and halogen-free, requiring no extra handling procedures and is therefore ideal for all applications where halogen-free components are required.

Application Fields

  • Switch mode power supplies (SMPS): The STL26NM60N has a low RDS(on) and gate charge, which makes it an ideal switch for SMPS, for both continuous current and regenerative-mode applications. It is also suitable for pulse width modulation (PWM) applications and can easily drive large load currents without any external components to help support the load current.
  • High-efficiency DC-DC converters: The STMicroelectronics STL26NM60N is also ideal for DC-DC converters as it can handle higher temperatures and switching frequencies, allowing for improved efficiency due to a reduced overall current conduction.
  • Voltage regulation: The STL26NM60N offers superior and reliable voltage regulation, facilitating the transfer of signals over a wide range of voltages.

Working Principle

The STMicroelectronics STL26NM60N is a metal-oxide semiconductor field-effect transistor (MOSFET) with an N-type drain and source. It works by trapping electrons in a state of inversion (between the source and drain) through the controlled application of a voltage at the gate. The P-type silicon wafer at the gates acts as the metal-oxide layer, trapping the current conducted electrons. In doing so, a voltage drop is caused in the channel. This effect helps keep the amount of current conducted between the drain and source stable by regulating the width of the N-channel.

The STL26NM60N can switch between conducting and non-conducting states instantaneously, with very low levels of conduction losses. This makes it ideal for applications that require high-speed switching or voltage regulation.

The STMicroelectronics STL26NM60N also offers excellent surge protection against EOS events. This protection allows the MOSFET to continue operating in applications that may be subject to power spikes. This protection also makes it ideal for applications such as motor control and high-efficiency power conversion.

Conclusion

The STMicroelectronics STL26NM60N is a high-voltage N-Channel MOSFET designed for switch mode power supplies, DC-DC converters, and voltage regulation. The device has a low threshold voltage, low RDS(on), and excellent SOT-223 surge protection, making it ideal for applications such as high-efficiency DC-DC converters and high-frequency switching power supplies. It also has excellent avalanche characteristics, providing superior protection against EOS events. The device is compliant to RoHS 6/6 and halogen-free with an isolated thermal pad. Overall, the STL26NM60N is an excellent choice for any application requiring a high voltage and low RDS(on) N-Channel MOSFET.

The specific data is subject to PDF, and the above content is for reference

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