STL24N65M2

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Introduction
The STL24N65M2 is a vertical power MOSFET transistor designed for use in high-power switching applications where fast switching, low noise and low on-resistance characteristics are essential.  Designed for use in switching DC power supplies, this transistor allows for improved power efficiency, heat dissipation, and circuit safety. This transistor is manufactured on a vertical MOSFET process and is encapsulated in a TO-220AB package.
Application Fields
The STL24N65M2 is particularly suited for use in high-power switching applications, such as DC power supplies, DC-to-DC converters, uninterruptable power supplies (UPS), solar inverters, and motor control. It is also suitable for other applications requiring efficient switching and low noise, such as switch mode amplifiers, audio amplifiers, and switching power converters.
Features
The high-speed switching provided by this transistor makes it suitable for high frequency applications. It features a low on-resistance of 10 mOhm and a maximum drain-source voltage of 650V. The maximum drain current is 2.4A, and it can handle a maximum power dissipation of 10W. This transistor has a low parasitic capacitance, low gate-charging capacitance, and an improved on-resistance drift resulting from the increased integration of different MOS components into a single chip.The STL24N65M2 is designed for use in applications requiring fast switching, low noise and low on-resistance. It is available in single and dual devices, and various package sizes are available to suit different device functions. The single-channel version has both a source pin and a drain pin, while the dual-channel version has an additional gate pin to control the current flow and switching between the two channels.
Working Principle
The STL24N65M2 is a vertical MOSFET transistor connected in a n-channel (source) mode. When the transistor is on, it functions as a low resistance path between the drain and the source. The output voltage can be controlled by the gate voltage and is prevented from overvoltage by the body diode, which acts as a protection mechanism against the forward bias of the transistor. When the voltage across the gate and source exceeds the threshold voltage (Vth), the MOSFET enters into the enhancement mode and begins to conduct. This increases the current through the channel and decreases the on-resistance. The drain current flows until the control voltage on the gate is brought back down to the threshold voltage.When the voltage on the gate is above the threshold voltage, i.e. in saturation, the drain current increases with the gate voltage and is limited only by the on-resistance of the transistor and the maximum drain current rating. The higher the gate voltage, the more current can flow, and the higher the power efficiency that can be achieved.The STL24N65M2 is designed to operate at frequencies up to 150MHz, making it suitable for high-frequency switching applications like DC power supplies, DC-to-DC converters, and switch mode amplifiers. Its switching characteristics can be adjusted with the use of a small external circuit to optimize power efficiency and reduce power dissipation.
Conclusion
The STL24N65M2 is a vertical power MOSFET transistor designed for use in high-power switching applications. It offers fast switching, low on-resistance and low noise characteristics, making it suitable for applications requiring efficient switching and low noise. It is available in single and dual devices, and various package sizes are available to suit different device functions. It is particularly suited for use in DC power supplies, DC-to-DC converters, uninterruptable power supplies (UPS), solar inverters, motor control, switch mode amplifiers and audio amplifiers.

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