STL28N60M2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STL28N60M2 is a Silicon Carbide (SiC) Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is commonly used for electric vehicles, power systems, and electric grid applications. The device is a three-terminal, high-voltage, and low-on-state resistance transistor with an on-state resistance of 28 milliohms. It has a low-voltage gate threshold and high-frequency switching capability. It\'s rated to handle a current of up to 3A and has a maximum operating temperature of 150 degrees Celsius.

In general, MOSFETs are used to control the flow of current in a circuit. They act as a switch and can either allow or prevent current from flowing between two points. The STL28N60M2 is a field effect transistor, which means that the current flow is controlled by an electric field generated by the gate terminal. This field creates a drain source channel, allowing a current to flow between the source and drain terminals when a voltage is applied to the gate. The STL28N60M2\'s low gate threshold and high switching frequency make it suitable for high frequency switches and electric vehicle applications.

The STL28N60M2 is used in a variety of applications, including industrial control circuits, electric vehicle systems, high-efficiency lighting, and power systems. It is also used in power electronics applications, such as high-efficiency AC-DC power conversion and DC-DC conversion. The device is robust and is designed for reliable operation in industrial environments. Due to its excellent thermal performance and high-frequency switching capability, it is ideal for high-frequency power applications. Its low gate-threshold and low-on-state resistance make it suitable for applications that require high-power efficiency.

The STL28N60M2\'s operation is based on its structure. The structure of the device is a three-terminal, high-voltage, and low-on-state resistance transistor. It consists of a substrate, a source region, and a drain junction. The source and drain junction is separated by an insulator, making it a field effect transistor. The source-drain junction is connected to the gate terminal, which can be controlled by an external voltage. When the gate voltage is increased, it creates an electric field that increases the width of the drain-source channel, allowing current to flow from the source to the drain. The device also has a built-in clamp that prevents the gate voltage from exceeding the rated value.

The STL28N60M2 is an ideal choice for power applications due to its excellent thermal performance and high-frequency switching capability. It is a reliable and robust device that is suitable for use in a variety of power applications. It is easy to use and provides excellent performance in industrial and other power system applications.

The specific data is subject to PDF, and the above content is for reference