Allicdata Part #: | 497-11205-2-ND |
Manufacturer Part#: |
STL23NM60ND |
Price: | $ 3.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 19.5A POWERFLAT |
More Detail: | N-Channel 600V 19.5A (Tc) 3W (Ta), 150W (Tc) Surfa... |
DataSheet: | STL23NM60ND Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 3.20229 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL23NM60ND Application Field and Working Principle
Introduction
STL23NM60ND is a N-channel Enhancement Mode Field Effect Transistor (FET). It is a type of MOSFET, which is a particular type of FET consisting of an insulated gate, a channel in which electrons flow between the source and drain, and a substrate. The main advantages of this type of FET are its low power consumption, increased voltage breakdown and high switching speed. In this article we will explore the application field and working principle of STL23NM60ND.
Application Field of STL23NM60ND
STL23NM60ND is an ideal choice for applications requiring a fast switching Power MOSFET. It provides high operating temperature, low gate charge and low on-state resistance, enabling high efficiency power converters and supplying low voltage voltage. As such, its application field is quite wide, being used in applications ranging from switching regulators, motor control, DC-DC converters to lighting control, audio power amplifiers and power supplies.STL23NM60ND also offers excellent surge capabilities and low gate charge. This makes it ideal for use in DC-DC converters or other applications in which a low gate charge is required. Additionally, its low on-state resistance allows for high efficiency power converters.
Working Principle of STL23NM60ND
The working principle of STL23NM60ND is based on that of a traditional MOSFET. The gate of the transistor works as an insulator, meaning that no current will flow from the source to the drain until the gate is turned on. This is done by applying a voltage to the gate terminal, which causes electrons to flow from the source to the drain. This in turn creates the potential for current to flow between the source and the drain.The FET can be considered a switch, as the gate voltage is effectively controlling the current flow through the channel. When the gate voltage is low, the transistor is in an “off” mode and no current is allowed to flow. When the gate voltage is high, the transistor is in an “on” mode and current can flow freely between the source and the drain. The amount of current that can flow between the source and the drain is determined by the gate voltage, which is why it is referred to as a “switch”.
Conclusion
In conclusion, STL23NM60ND is a N-channel Enhancement Mode Field Effect Transistor which is widely used in DC-DC converters, motor control, power supplies, audio power amplifiers and other small electronic devices. It offers excellent surge capabilities and low gate charge, enabling fast switching and excellent power efficiency. Its working principle is based on that of a traditional MOSFET, where the gate voltage is controlling the current flow between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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