
Allicdata Part #: | 497-13111-5-ND |
Manufacturer Part#: |
STP34N65M5 |
Price: | $ 6.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 28A TO-220 |
More Detail: | N-Channel 650V 28A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 535 |
1 +: | $ 6.53940 |
10 +: | $ 6.34322 |
100 +: | $ 6.21243 |
1000 +: | $ 6.08164 |
10000 +: | $ 5.88546 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 62.5nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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An STP34N65M5 is a type of semiconductor device classified as a Power MOSFET, with Single Circuit Configuration. It is a metal-oxide-semiconductor field-effect transistor, composed of a metal-oxide layer acting as an insulator and a gate electrode attached to the metal-oxide layer. This device can enable a low “on-resistance” structure and is suitable for high-side load switching.
The STP34N65M5 Power MOSFET is generally employed in battery powered applications. It has a high transient thermal impedance and wide operating temperatures which make it suitable in applications such as automotive and industrial, as well as other applications that need to switch very high currents with very little loss.
The STP34N65M5 has an 8-pin package. Its drain-source voltage is 650V, coupled with a 14.7A continuous drain current and an 11.9A pulsed drain current. It is also capable of a drain-source dV/dt of 5V/µs.
The STP34N65M5 is used for applications that need to switch very high currents with very little loss. This device supports a logic level gate drive with a minimum 5V gate drive, at a 0.5A DC current. This feature allows for an easy device control and makes it ideal for use in the automotive, industrial, and medical markets.
The working principle of the STP34N65M5 could be described as a “current source” configuration. It passes current when the gate voltage is applied, as well as when the drain terminal is connected to the source, which is controlled by the gate voltage.
The working principle of the STP34N65M5 is relatively simple. The device acts as a resistive element that would limit the current flow through the device until the gate voltage reaches a certain level. At this point, the gate voltage would cause the device to turn “on”, allowing for current to flow. The STP34N65M5 is capable of efficiently controlling the current flow through it, preventing its failure.
The STP34N65M5 has several advantages over other power MOSFETs. Its lower gate-drain capacitance makes it suitable for high-speed switching applications. In addition, it has a low gate-source capacitance, allowing for increased switching speeds and reduced switching losses. Its temperature-sensing circuit also helps reduce current losses during overloads.
The STP34N65M5 is a versatile device, used in various applications such as power converters, motor control, and low-loss switching devices. It is an efficient device that is capable of controlling the current flow, while also providing high performance and reliability. As a result, the STP34N65M5 is used in many industrial and automotive devices, as well as other applications that require low current losses and high reliability.
The specific data is subject to PDF, and the above content is for reference
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