STP35N60M2-EP Allicdata Electronics
Allicdata Part #:

STP35N60M2-EP-ND

Manufacturer Part#:

STP35N60M2-EP

Price: $ 1.85
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET
More Detail: N-Channel 600V Through Hole TO-220
DataSheet: STP35N60M2-EP datasheetSTP35N60M2-EP Datasheet/PDF
Quantity: 1000
1000 +: $ 1.67360
Stock 1000Can Ship Immediately
$ 1.85
Specifications
Series: MDmesh™ M2-EP
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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STP35N60M2-EP is an N-channel enhancement-mode field-effect transistor designed for power switching applications, specifically in high-current, high-voltage, and high-temperature environments. It possesses excellent switching characteristics with minimum on-state resistance (Rdson). STP35N60M2-EP is a power MOSFET manufactured using STMicroelectronics’s unique advanced PowerMESH technology.

The STP35N60M2-EP is specifically designed to handle high-power in a wide range of applications, from consumer, commercial and industrial areas. It can be used in switching mode power supplies, automotive, home appliances, audio/video, and lighting. It also provides an effective solution for a number of applications such as motor control, battery chargers, rectifiers, AC/DC converters, DC/DC converters, and DC/AC inverters.

This product is offered in a TO-220 package with a maximum drain-source voltage of 600 V, a drain current of 25 A, and a total gate charge of 12 nC. Its gate threshold voltage (VGS) is 4.5 V and drain-source resistance (RDS(on)) is 0.1 Ω. It has an operating single pulse thermal resistance of 625 °C/W and maximum junction temperature of 150 °C.

The STP35N60M2-EP is activated with a low gate-source voltage (VGS) and requires very low input current for operation. This MOSFET utilizes an insulated gate whose voltage acts as a control signal to turn the flow of current on and off. When a positive voltage is applied to the gate terminal, it creates an electrical field that causes electrons to be attracted to the gate and form an inversion layer. This inversion layer allows current to flow through the channel between the source and drain. When a negative voltage is applied, it causes the inversion layer to break down and the current flow is blocked.

The STP35N60M2-EP has an impressive combination of features that makes it suitable for high current applications with high voltage levels. Its low resistance and high current capabilities allow designs to reduce power losses and reduce EMI emissions. Its wide operating temperature range makes it suitable for use in harsh environments, such as vehicles. Furthermore, its rugged construction makes it ideal for operation in difficult applications.

In conclusion, the STP35N60M2-EP is an ideal choice for applications that require high-current, high-voltage and high-temperature operation. Its wide operating temperature range, low on resistance and high current capabilities allow designers to reduce power losses and reduce EMI emissions. Its ability to handle a wide range of applications make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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