TSM4925DCS RLG Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	7.1A (Ta)
Rds On (Max) @ Id, Vgs:	25 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 15V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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Introduction of TSM4925DCS RLG Application Field and Working Principle

Transistors, FETs, and MOSFETs arrays (RLGs) are semiconductor devices used in various types of circuits and systems. Their electronic behavior has significant applications in modern electronic systems. One of the latest high-performance FETs is the TSM4925DCS RLG. This article introduces the application field and working principle of this device.

Application Field

RLGs are widely used in fields such as electrical and telecommunications, home theater, power control, and audio. In particular, the TSM4925DCS RLG is used for high-efficiency switching applications in areas with high speed and low power requirements.Widely used in power electronics, such as power management telecom power circuits and automotive powertrain systems, the TSM4925DCS RLG supports high current levels and low on-resistance. The device is specifically designed to maintain maximum switching frequencies at higher current densities and is capable of maintaining a low RDS(on) over the entire operating temperature range. The switching speed of the TSM4925DCS RLG is also significantly better than other FETs, due to the device\'s N-type MOSFET technology, which improves the device\'s speed and efficiency. Additionally, the device\'s low voltage drop, low QRR, and high thermal durability make it ideal for use in high-efficiency, high-performance switching applications.

Working Principle

The TSM4925DCS RLG works on the principle of an N-type MOSFET, which is the most common type of MOSFET used in power electronics. This makes it suitable for a variety of applications, such as high-frequency switching, power switching, and audio amplification.In general, an n-type MOSFET is a four-terminal device that consists of a source and drain, and two gates, called the gate and the shield gates. The source and drain are connected to a load, and the gate provides control over the flow of current between the source and the drain. The shield gate improves the high frequency performance of the device.The main function of a MOSFET device is to control and regulate the flow of current between two points. This device is bypassed whenever there is an increase in voltage on the source, which meant that the current flow can be regulated or even stopped, depending on the user\'s needs.

Conclusion

In conclusion, the TSM4925DCS RLG is a type of FET used in various applications, as it supports high current levels and low on-resistance in areas with high speed and low power requirements. With its N-type MOSFET technology, high switching speeds, low voltage drop, low QRR, and high thermal durability, the device is an ideal solution for power switching and audio amplification applications.

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