TSM4N60ECH C5G

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The TSM4N60ECH C5G is a vertical double-diffused MOSFET (VDMOS) designed to offer high performance and low on-resistance. It has an operating voltage range of 30V to 600V and a high current rating of 4A at 25°C and 19A at 25°C, making it suitable for a variety of applications. The device is designed to provide excellent thermal stability, fast switching speed, and low gate charge, making it an excellent choice for high-efficiency power supplies, motor control and high-speed switching applications.

The TSM4N60ECH C5G is based on a vertical double-diffused metal-oxide-semiconductor (VDMOS) structure. This structure provides superior thermal characteristics, high breakdown voltages, fast switching times, and low on-resistance. The device is built on a high-speed, small-cell CMOS process that allows for the use of thin body and high transconductance. This design provides an ideal combination of minimal on-resistance and high switching speed.

The device is suitable for a variety of applications, including switch mode power supplies, DC/DC converters, motor control, and high-speed switching. It is designed to provide a fast and reliable power switch for these applications, with low input capacitance and gate charge to optimize the system’s performance. The device’s low on-resistance enables high efficiency in the system, and its high-speed switching improves the response time of the application. In addition, the device has extremely robust thermal characteristics, allowing it to be used in high-temperature applications.

The operation of the TSM4N60ECH C5G is based on the principle of induction, where a voltage is applied across two insulated magnets and current flows through them. This current creates a magnetic field, which in turn creates a voltage. This voltage is then used to drive a transistor, which acts as a switch by turning the device on and off. The device is optimized for fast on-off operation, meaning it can switch faster than traditional MOSFETs, making it suitable for high-speed applications.

The TSM4N60ECH C5G is an excellent solution for high-efficiency power supplies, motor control and high-speed switching applications. Its VDMOS structure provides superior thermal characteristics, high breakdown voltages, fast switching times, and low on-resistance. The device is optimized for fast on-off operation, allowing for improved response time and system efficiency. In addition, the thermal characteristics allow for use in a variety of high-temperature applications.

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